US 8,426,894 B2Granted

Pixel structure

AssigneeAu Optronics Corporation

InventorsKuo-Lung Fang, Hsiang-Lin Lin, Chin-Yueh Liao

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Abstract

A pixel structure includes a scan line, a data line, an active element, a first passivation layer, a second passivation layer and a pixel electrode. The data line includes a first data metal segment and a second data metal layer. The active element includes a gate electrode, an insulating layer, a channel layer, a source and a drain. The channel layer is positioned on the insulating layer above the gate electrode. The source and the drain are positioned on the channel layer. The source is coupled to the data line. The first passivation layer and the second passivation layer cover the active element and form a first contact hole to expose a part of the drain. The second passivation layer covers a part edge of the drain. The pixel electrode is disposed across the second passivation layer and coupled to the drain via the first contact hole.

Claims30

Dependent claims

A pixel structure, comprising:

a scan line having a first scan metal layer and a second scan metal layer;
a data line interlaced with the scan line to form an interlacing region, wherein the data line comprises a first data metal segment and a second data metal layer, the first data metal segment and the interlacing region are spaced at a first distance, and the second data metal layer is disposed on the first data metal segment and across the interlacing region;
an active element electrically coupled to the scan line and the data line, comprising:
a gate electrode electrically connected to the scan line;
an insulating layer partially formed on the gate electrode;
a channel layer formed on the insulating layer above the gate electrode;
and
a source and a drain formed on the channel layer, wherein the source is coupled to the data line;
a first passivation layer and a second passivation layer covering the active element, wherein a first contact hole exposing a region of the drain is formed between the first passivation layer and the second passivation layer, the first passivation layer and the second passivation layer cover sidewalls of the drain, and the region of the drain exposed by the first contact hole is not connected with the sidewalls of the drain ;
and
a pixel electrode disposed across the second passivation layer and coupled to the drain via the first contact hole.

8 more elements

A pixel structure, comprising:

a scan line having a first scan metal layer and a second scan metal layer;
a data line interlaced with the scan line to form an interlacing region, wherein the data line comprises a first data metal segment and a second data metal layer, the first data metal segment and the interlacing region are spaced at a first distance, the second data metal layer is disposed on the first data metal segment and across the interlacing region, and the second scan metal layer is stacked on the first scan metal layer and directly contacts with the first scan metal layer;
an active element electrically coupled to the scan line and the data line, comprising:
a gate electrode electrically connected to the scan line;
an insulating layer partially formed on the gate electrode;
a channel layer formed on the insulating layer above the gate electrode;
and
a source and a drain formed on the channel layer, wherein the source is coupled to the data line;
a first passivation layer and a second passivation layer covering the active element and forming a first contact hole to expose a part of the drain, wherein the second passivation layer covers a part edge of the drain;
and
a pixel electrode disposed across the second passivation layer and coupled to the drain via the first contact hole.

8 more elements

Dependencies are inferred from the claim text.

Facts

Application: 13/163,780Filed 20 Jun 2011 · division
Priority: TW 97103007 A25 Jan 2008
Published: US 2011/0241009 A16 Oct 2011
Granted: 23 Apr 2013
Term ends: Not estimatedThe source records don’t support an estimate.

Classification6 codes

H10D 30/6737
Characterised by the electrodes: characterised by the electrode materials
H10D 30/6743
Group IV materials, e.g. germanium or silicon carbide: silicon
H10D 86/0231
Of multiple TFTs: using masks, e.g. half-tone masks
H10D 86/441
Characterised by multiple TFTs: interconnections, e.g. scanning lines