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US 8,426,890 B2Granted
Semiconductor device and manufacturing method with improved epitaxial quality of III-V compound on silicon surfaces
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsCheng-Hsien Wu, Chih-Hsin Ko, Clement Hsingjen Wann
Life of this patent
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Abstract
Stacking faults are reduced or eliminated by epitaxially growing a III-V compound semiconductor region in a trench followed by capping and annealing the region. The capping layer limits the escape of atoms from the region and enables the reduction or elimination of stacking faults along with the annealing.
Claims20
A semiconductor device, comprising:
- a silicon substrate;
- and
- a III-V compound semiconductor region over and contacting the silicon substrate,
- wherein
- the III-V compound semiconductor region has a slanted interface with the silicon substrate, the silicon substrate is a Si(001) substrate with a major surface being a Si(001) surface,
- a silicon surface of the slanted interface has a <111> orientation for promoting epitaxial growth of a III-V crystalline compound in the III-V compound semiconductor region, thereby resulting in the III-V compound semiconductor region substantially free of stacking faults,
- the silicon substrate has insulation regions extending from the major surface into the silicon substrate,
- the silicon substrate includes therein a trench in which the III-V compound semiconductor region is formed, the trench formed in a portion of the silicon substrate between opposing sidewalls of the adjacent insulation regions.
5 more elements
A semiconductor device, comprising:
- a silicon substrate;
- and
- a III-V compound semiconductor region over and contacting the silicon substrate,
- wherein
- the III-V compound semiconductor region has an interface with the silicon substrate,
- the silicon substrate is a Si(111) substrate with a major surface being a <111> surface with an off angle of at least 6 degrees,
- a silicon surface of the interface has a <111> orientation for promoting epitaxial growth of a III-V crystalline compound in the III-V compound semiconductor region, thereby resulting in the III-V compound semiconductor region substantially free of stacking faults.
4 more elements
A semiconductor device, comprising:
- a silicon substrate;
- and
- first and second III-V compound semiconductor regions over and contacting the silicon substrate,
- wherein
- each of the III-V compound semiconductor regions has an interface with the silicon substrate,
- a silicon surface of the interface has a <111> orientation for promoting epitaxial growth of a III-V crystalline compound in the corresponding III-V compound semiconductor region, thereby resulting in the corresponding III-V compound semiconductor region substantially free of stacking faults, and
- longitudinal directions of the III-V compound semiconductor regions are perpendicular to each other.
4 more elements
Dependencies are inferred from the claim text.