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US 8,426,887 B2Granted
Light emitting device and light emitting device package
AssigneeLG Innotek Co., Ltd.
InventorHyo Kun Son
Life of this patent
Estimating the term…
Abstract
Provided is a light emitting device. In one embodiment, the light emitting device includes: a first conductive type semiconductor layer including a plurality of grooves; an active layer formed on a upper surface of the first conductive type semiconductor layer and along the grooves; an anti-current leakage layer having a flat upper surface on the active layer; and a second conductive type semiconductor layer on the anti-current leakage layer.
Claims10
A light emitting device comprising:
- a first conductive type semiconductor layer including a plurality of grooves;
- an active layer formed over an upper surface of the first conductive type semiconductor layer and along the grooves;
- at least one anti-current leakage layer having a substantially flat upper surface over the active layer;
- and
- a second conductive type semiconductor layer over the anti-current leakage layer,
- wherein the at least one anti-current leakage layer includes a first anti-current leakage layer and a second anti-current leakage layer over the first anti-current leakage layer, wherein the first anti-current leakage layer includes InxAlyGa1-x-yN (0<x≦0.03, 0<y<1, 0<x+y<1), and wherein the second anti-current leakage layer has a superlattice structure in which a stack structure of an AlGaN layer and a GaN layer is repeatedly stacked.
3 more elements
A light emitting device, comprising:
- a first conductive type semiconductor layer including a plurality of grooves;
- an active layer formed over an upper surface of the first conductive type semiconductor layer and along the grooves;
- at least one anti-current leakage layer having a substantially flat upper surface over the active layer;
- a second conductive type semiconductor layer over the anti-current leakage layer;
- a groove forming layer under the first conductive type semiconductor layer;
- and
- an undoped semiconductor layer under the groove forming layer, wherein the groove forming layer includes a plurality of second grooves.
4 more elements
Dependencies are inferred from the claim text.