Light emitting device, method of manufacturing the light emitting device, light emitting device package, and lighting unit

A light emitting device package comprising:

• a package body;
• a first electrode layer and a second electrode layer on the package body;
• and
• a light emitting device electrically connected to the first and second electrode layers,
• wherein the light emitting device comprises:
• a conductive support substrate;
• a protection layer on the conductive support substrate;
• a light emitting structure layer comprising a first conductive type semiconductor layer, a second conductive type semiconductor layer under the first conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer on the conductive support substrate and the protection layer;
• a reflective layer between the light emitting structure layer and the conductive support substrate;
• and an electrode on the light emitting structure layer,
• wherein the protection layer includes a first portion between the second conductive type semiconductor layer and the conductive support substrate and a second portion having an inclined top surface with respect to a top surface of the first portion,
• wherein the second portion of the protection layer is outwardly disposed from an outer wall of the light emitting structure layer,
• wherein an outer portion of the inclined top surface of the second portion of the protection layer is spaced apart from the outer wall of the light emitting structure layer.

A light emitting device comprising:

• a conductive support substrate;
• a light emitting structure layer on the conductive support substrate, the light emitting structure layer comprising a first conductive type semiconductor layer, a second conductive type semiconductor layer under the first conductive semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer;
• a protection layer including a first portion between the second conductive type semiconductor layer and the conductive support substrate, and a second portion outwardly disposed beyond an outer wall of the light emitting structure layer;
• a passivation layer on the outer wall of the light emitting structure layer;
• a reflective layer between the light emitting structure layer and the conductive support substrate;
• and
• an electrode on the light emitting structure layer,
• wherein the second portion of the protection layer is located at a lower position than a bottom surface of the light emitting structure layer and has an inclined top surface under the passivation layer.