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US 8,426,871 B2Granted
Phosphor converting IR LEDs
AssigneeHoneywell International Inc.
InventorsWilliam Ross Rapoport, James Kane, Kirin T. Castelino
Life of this patent
Estimating the term…
Abstract
The production of light of various wavelengths using IR phosphor down conversion techniques using existing LED emissions to pump sensitizer-rare earth ions that emit at other wavelengths. A sensitizer absorbs an LED chip pump emission and then transfers that energy with high quantum efficiency to dopant ions that then emits at their characteristic wavelength.
Claims13
A stokes radiation emitting device comprising:
- a) a light source;
- and
- b) an energy downconverting phosphor material on the light source, the phosphor material comprising at least one infrared radiation emitting phosphor that absorbs light energy emitted from said light source and emits infrared radiation responsive to said absorbed light energy, wherein said phosphor material comprises one or more rare earth element doped garnets, one or more rare earth element doped iron garnets, one or more mixed garnets doped with one or more rare earth elements, one or more rare earth element doped colquiriites, at least one garnet host phosphor doped with a rare earth emitting element, at least one garnet host phosphor doped with chromium and optionally one or more photon emitting rare earth elements, at least one garnet host phosphor doped with iron and optionally one or more photon emitting rare earth elements, yttrium gallium garnet, yttrium aluminum garnet, or a combination thereof.
A stokes radiation emitting light emitting diode assembly comprising:
- a) a mount lead comprising a recessed cup and a lead, wherein said recessed cup optionally comprises a reflective metal capable of reflecting ultraviolet to infrared radiation;
- b) a light emitting diode semiconductor chip mounted in the recessed cup of the mount lead, the light emitting diode semiconductor chip having an electrode that is electrically connected to the mount lead;
- wherein the light emitting diode semiconductor chip comprises a material that emits light having wavelengths ranging from the ultra-violet to the near infrared regions of the electromagnetic spectrum when excited by electrical energy;
- and
- c) a phosphor material on the light emitting diode semiconductor chip, said phosphor material comprising at least one infrared radiation emitting phosphor that absorbs light energy from said light emitting diode semiconductor chip and emits infrared radiation responsive to said absorbed light energy, wherein said phosphor material comprises one or more rare earth element doped garnets, one or more rare earth element doped iron garnets, one or more mixed garnets doped with one or more rare earth elements, one or more rare earth element doped colquiriites, at least one garnet host phosphor doped with a rare earth emitting element, at least one garnet host phosphor doped with chromium and optionally one or more photo emitting rare earth elements, at least one garnet host phosphor doped with iron and optionally one or more photon emitting rare earth elements, yttrium gallium garnet, yttrium aluminum garnet, or a combination thereof.
2 more elements
A stokes radiation emitting light emitting diode assembly comprising:
- a) a mount lead comprising a recessed cup and a lead, wherein said recessed cup optionally comprises a reflective metal capable of reflecting ultraviolet to infrared radiation;
- b) a light emitting diode semiconductor chip mounted in the recessed cup of the mount lead, the light emitting diode semiconductor chip having an electrode that is electrically connected to the mount lead;
- wherein the light emitting diode semiconductor chip comprises a material that emits light having wavelengths ranging from the ultra-violet to the near infrared regions of the electromagnetic spectrum when excited by electrical energy;
- c) a phosphor material on the light emitting diode semiconductor chip, said phosphor material comprising at least one infrared radiation emitting phosphor that absorbs light energy from said light emitting diode semiconductor chip and emits infrared radiation responsive to said absorbed light energy;
- and
- a collimating lens positioned adjacent to the light emitting diode semiconductor chip that is capable of reducing the angular divergence of the infrared radiation emitted from said phosphor material.
3 more elements
Dependencies are inferred from the claim text.