Thin-film transistor array device, el display panel, el display device, thin-film transistor array device manufacturing method, el display panel manufacturing method

An electroluminescence display panel, comprising:

• an upper electrode;
• a lower electrode;
• an electroluminescence layer including an electroluminescence light-emitting element that includes a light-emitting function layer between the upper electrode and the lower electrode;
• a thin-film transistor array device for controlling the electroluminescence light-emitting element;
• and
• an interlayer insulating film between the electroluminescence layer and the thin-film transistor array device,
• wherein the lower electrode is electrically connected to the thin-film transistor array device via a contact hole in the interlayer insulating film,
• the thin-film transistor array device includes:
• a substrate;
• a first transistor above the substrate and including a first transistor gate electrode and a first transistor source electrode;
• a second transistor including a current-supply electrode for supplying current, the current-supply electrode being electrically connected to the lower electrode;
• a passivation film between the interlayer insulating film and both the first transistor and the second transistor;
• a source wire above the substrate and below the passivation film in a first layer, the source wire being electrically connected to the first transistor source electrode;
• a gate wire transverse to the source wire and above the passivation film in a second layer different than the first transistor gate electrode, the gate wire being electrically connected to the first transistor gate electrode via a first hole in the passivation film;
• a relay electrode above the passivation film in the second layer and overlapping with the current-supply electrode for being a relay between the current-supply electrode and the lower electrode;
• and
• a conductive oxide film above the passivation film and between the passivation film and both the gate wire and the relay electrode, the conductive oxide film being electrically disconnected between the gate wire and the relay electrode,
• wherein the first transistor and the second transistor are bottom gate transistors,
• an end portion of the source wire is exposed through the passivation film via a second hole in the passivation film, the end portion of the source wire being connectible with a source driving circuit that is outside the thin-film transistor array device,
• the conductive oxide film covers the end portion of the source wire that is exposed through the passivation film via the second hole,
• the current-supply electrode is electrically connected to the lower electrode via a third hole in the passivation film and the contact hole in the interlayer insulating film,
• the conductive oxide film is between the current-supply electrode and the relay electrode and electrically connects the current-supply electrode and the relay electrode, and
• the relay electrode comprises a same material as the gate wire.

A method of manufacturing a thin-film transistor array device, comprising:

• preparing a substrate;
• forming a source wire above the substrate;
• forming a first transistor including a first transistor gate electrode and a first transistor source electrode above the substrate;
• forming a second transistor including a current-supply electrode above the substrate for supplying current;
• forming a passivation film above the first transistor and the second transistor;
• forming a conductive oxide film above the passivation film;
• forming a gate wire above the source wire and transverse to the source wire;
• and
• forming a relay electrode above the passivation film that overlaps with the current-supply electrode, the relay electrode being a relay between the current-supply electrode and the lower electrode,
• wherein the first transistor and the second transistor are bottom gate transistors,
• the source wire is electrically connected to the first transistor source electrode and below the passivation film in a first layer,
• the gate wire is above the passivation film in a second layer different than the first transistor gate electrode and electrically connected to the first transistor gate electrode via a first hole in the passivation film,
• after forming the passivation film and before forming the conductive oxide film above the passivation film, an end portion of the source wire is exposed through the passivation film via a second hole in the passivation film, the end portion of the source wire being formed into a terminal for connection with a source driving circuit that is outside the thin-film transistor array device,
• the conductive oxide film is formed to cover the end portion of the source wire that is exposed through the passivation film via the second hole,
• the conductive oxide film is formed between the passivation film and both the gate wire and the relay electrode and divided between the gate wire and the relay electrode,
• the conductive oxide film is between the relay electrode and the current-supply electrode and electrically connects the relay electrode and the current-supply electrode, and
• the relay electrode is formed in the second layer and comprises a same material as the gate wire.

A method of manufacturing an electroluminescence (EL) panel, comprising:

• preparing a substrate;
• forming a source wire above the substrate;
• forming a first transistor including a first transistor gate electrode and a first transistor source electrode above the substrate;
• forming a second transistor including a current-supply electrode above the substrate for supplying current;
• forming a passivation film above the first transistor and the second transistor;
• forming a conductive oxide film above the passivation film;
• forming a gate wire above the source wire and transverse to the source wire;
• forming a relay electrode above the passivation film that overlaps with the current-supply electrode, the relay electrode being a relay between the current-supply electrode and the lower electrode;
• forming an interlayer insulating film above the passivation film;
• forming a lower electrode above the interlayer insulating film;
• forming a light-emitting function layer above the lower electrode;
• and
• forming an upper electrode above the light-emitting function layer,
• wherein the first transistor and the second transistor are bottom gate transistors,
• the source wire is electrically connected to the first transistor source electrode and below the passivation film in a first layer,
• the gate wire is above the passivation film in a second layer different than the first transistor gate electrode and electrically connected to the first transistor gate electrode via a first hole in the passivation film,
• the lower electrode is electrically connected to a thin-film transistor array device via a second hole in the passivation film and a contact hole in the interlayer insulating film,
• after forming the passivation film and before forming the conductive oxide film above the passivation film, an end portion of the source wire is exposed through the passivation film via a third hole in the passivation film, the end portion of the source wire being formed into a terminal for connection with a source driving circuit that is outside the thin-film transistor array device,
• the conductive oxide film is formed to cover the end portion of the source wire that is exposed through the passivation film via the third hole,
• the conductive oxide film is formed between the passivation film and both the gate wire and the relay electrode and divided between the gate wire and the relay electrode,
• the conductive oxide film is between the relay electrode and the current-supply electrode and electrically connects the relay electrode and the current-supply electrode, and
• the relay electrode is formed in the second layer and comprises a same material as the gate wire.