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US 8,426,869 B2Granted
Thin film transistor and method of fabricating the same
AssigneeLG Display Co., Ltd.
InventorsGee-Sung Chae, Mi-Kyung Park
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Abstract
A thin film transistor includes: a silicon nanowire on a substrate, the silicon nanowire having a central portion and both side portions of the central portion; a gate electrode on the central portion; and a source electrode and a drain electrode spaced apart from the source electrode on the both side portions, the source electrode and the drain electrode electrically connected to the silicon nanowire, respectively.
Claims14
An array substrate for a flat panel display device, comprising:
- a silicon nanowire on a substrate, the silicon nanowire having a central portion and respective side portions of the central portion;
- a fixing layer on the central portion of the silicon nanowire and the substrate, the fixing layer fixing the silicon nanowire to the substrate;
- a gate electrode on the fixing layer over the central portion;
- a first source electrode and a first drain electrode on the fixing layer over the respective side portions of the silicon nanowire, the first drain electrode spaced apart from the first source electrode, the first source electrode and the first drain electrode electrically connected to the silicon nanowire;
- a gate insulating layer on the gate electrode, the first source electrode and the first drain electrode;
- a second source electrode connected to the first source electrode and a second drain electrode connected to the first drain electrode;
- and
- a pixel electrode connected to the second drain electrode.
5 more elements
An array substrate for a flat panel display device, comprising:
- a silicon nanowire on a substrate, the silicon nanowire having a central portion and respective side portions of the central portion;
- a fixing layer on the central portion of the silicon nanowire and the substrate, the fixing layer fixing the silicon nanowire to the substrate;
- a gate insulating layer on the fixing layer;
- a gate electrode on the gate insulating layer, the respective side portions of the silicon nanowire exposed outside the fixing layer, the gate insulating layer and the gate electrode;
- a first source electrode and a first drain electrode spaced apart from the first source electrode on respective side portions, the first source and first drain electrodes directly contacting the respective portions of the silicon nanowire exposed outside the fixing layer, the gate insulating layer and the gate electrode;
- a second source electrode connected to the first source electrode and a second drain electrode connected to the first drain electrode;
- and
- a pixel electrode connected to the second drain electrode.
5 more elements
Dependencies are inferred from the claim text.