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US 8,422,525 B1Granted
Optical device structure using miscut GaN substrates for laser applications
AssigneeSoraa, Inc.
InventorsJames W. Raring, Daniel F. Feezell, Nicholas J. Pfister
Life of this patent
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Abstract
An optical device capable of emitting light having a wavelength ranging from about 490 to about 580 nanometers has a gallium nitride substrate with a semipolar crystalline surface region characterized by an orientation of greater than 3 degrees from (11-22) towards (0001) but less than about 50 degrees. A laser stripe formed on the substrate has a cavity orientation substantially parallel to the m-direction.
Claims18
A semiconductor laser comprising:
- a gallium nitride substrate having a semipolar crystalline surface region characterized by and an orientation of greater than about 2 degrees from an (11-22) plane toward a (0001) plane, but less than about 50 degrees, and having an m-direction, and a c-projection direction perpendicular to the m-direction;
- a laser region formed over the semipolar crystalline surface region, the laser region having a cavity orientation substantially parallel to the m-direction and extending from a first end to a second end, and having an indium concentration sufficient to cause emission of polarized light of about at least 490 nm wavelength;
- a first cleaved m-face facet on the first end;
- and
- a second cleaved m-face facet on the second end;
- wherein the laser region emits light polarized substantially parallel to the c-projection direction.
3 more elements
A semiconductor laser comprising:
- a gallium nitride substrate having a semipolar crystalline surface region characterized by an orientation of approximately (11-23) and having an m-direction, and a c-projection direction perpendicular to the m-direction;
- a laser region formed over the semipolar crystalline surface region, the laser region having a cavity orientation substantially parallel to the m-direction and extending from a first end to a second end, and having an indium concentration sufficient to cause emission of polarized light of about at least 490 nm wavelength;
- a first cleaved m-face facet on the first end;
- and
- a second cleaved m-face facet on the second end;
- wherein the laser region emits light polarized substantially parallel to the c-projection direction.
3 more elements
Dependencies are inferred from the claim text.