Detecting device and solid-state imaging device

Abstract

A solid-state imaging device includes a light receiving section having a plurality of threshold voltage modulation pixel circuits each configured including a MOS transistor having a gate electrode connected to a supply terminal of a gate voltage of a vertical scanning circuit, and a source electrode connected to one end of each capacitor of a line memory group via a switching element, and a photodiode having an anode connected to a back-gate electrode of the MOS transistor and a cathode connected to a drain electrode thereof, and a buffer circuit having an input terminal connected to a supply line of a control voltage of the control voltage supply means adapted to supply the vertical scanning circuit with the control voltage, and an output terminal connected to the other end of each capacitor, and having a signal transfer characteristic the same as that of the pixel circuit.

Dependencies are inferred from the claim text.