Field effect transistor gas sensor having a housing and porous catalytic material contained therein
AssigneeRobert Bosch GmbH
InventorsRichard Fix, Markus Widenmeyer, Alexander Martin, Dieter Elbe
Life of this patent
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Abstract
A gas sensor for determining gas components in gas mixtures, e.g., for exhaust gases of internal combustion engines, includes a housing and a sensor element configured as a field effect transistor which has source, drain, and gate electrodes applied on a semiconductor substrate. A porous, catalytically active material is provided inside the housing of the gas sensor.
Claims14
A gas sensor for determining gas components in a gas mixture, the gas sensor comprising:
- a housing;
- a gas-sensitive element that includes at least one field-effect transistor;
- and
- a porous, catalytically active material provided inside the housing;
- wherein:
- the field-effect transistor includes source, drain, and gate electrodes applied to a semiconductor substrate;
- and
- the porous, catalytically active material contains a ceramic material having a BET surface area of 20 m2/g to 400 m2/g.
A gas sensor for determining gas components in a gas mixture, the gas sensor comprising:
- a housing;
- a gas-sensitive element that includes at least one field-effect transistor;
- and
- a porous, catalytically active material provided inside the housing;
- wherein:
- the field-effect transistor includes source, drain, and gate electrodes applied to a semiconductor substrate;
- and
- a layer thickness of the porous, catalytically active material is 2 μm to 20 μm.
A gas sensor for determining gas components in a gas mixture, comprising:
- a housing;
- a gas-sensitive element that includes at least one field-effect transistor;
- a porous, catalytically active material provided inside the housing;
- and
- a feed line for supplying the gas mixture to the gas-sensitive element;
- wherein:
- the field-effect transistor includes source, drain, and gate electrodes applied to a semiconductor substrate;
- and
- the porous, catalytically active material is positioned inside the feed line as a diffusion barrier.
A gas sensor for determining gas components in a gas mixture, comprising:
- a housing;
- a gas-sensitive element that includes at least one field-effect transistor;
- and
- a porous, catalytically active material provided inside the housing;
- wherein:
- the field-effect transistor includes:
- source, drain, and gate electrodes applied to a semiconductor substrate;
- a gas-sensitive coating that is provided on the gate electrode, is made of a material different than a material of which the gate electrode is made, and is in direct physical contact with the electrode material of the gate electrode.
Dependencies are inferred from the claim text.