Optical device structure using GaN substrates and growth structure for laser applications

An optical device configured to emit electromagnetic radiation of more than about 500 nm wavelength comprising:

• a gallium nitride substrate having a nonpolar crystalline surface region;
• an n-GaN cladding layer overlying the surface region, the n-GaN cladding layer having a thickness between 100 nm and 3000 nm and a Si doping level between 1E17 to 5E19 cm-3;
• an n-side SCH layer overlying the n-GaN cladding layer, the n-side SCH layer comprised of InGaN and having a molar fraction of indium between 3% and 7%, and a thickness between 20 and 150 nm;
• a multiple quantum well active region overlying the n-side SCH layer, the multiple quantum well active region comprising a plurality of 3.5-7.5 nm InGaN quantum wells separated by 1.5-7.5 nm GaN or InGaN barriers;
• a p-type cladding layer overlying the multiple quantum well active region, the p-type cladding layer having a thickness between 400 nm and 1000 nm with a Mg doping level between 5E17 cm-3 to 5E19 cm-3;
• a p++-type contact layer overlying the p-type cladding layer, the p++-type contact layer having a thickness between 10 nm and 50 nm with a Mg doping level between 5E19 cm-3 and 1E21 cm-3;
• and
• an electron blocking layer region overlying the multiple quantum well active region, where the electron blocking layer is comprised of AlGaN or AlInGaN with between 5 and 30% molar fraction of AlN, and having a thickness between 5 nm and 30 nm.

An optical device configured to emit electromagnetic radiation of more than about 500 nm wavelength comprising:

• a gallium nitride substrate having a nonpolar crystalline surface region;
• an n-GaN cladding layer overlying the surface region, the n-GaN cladding layer having a thickness between 100 nm and 3000 nm and a Si doping level between 1E17 to 5E19 cm-3;
• an n-side SCH layer overlying the n-GaN cladding layer, the n-side SCH layer comprised of InGaN and having a molar fraction of indium between 3% and 7%, and a thickness between 20 and 150 nm;
• a multiple quantum well active region overlying the n-side SCH layer, the multiple quantum well active region comprising a plurality of 3.5-7.5 nm InGaN quantum wells separated by 1.5-7.5 nm GaN or InGaN barriers;
• a p-type cladding layer overlying the multiple quantum well active region, the p-type cladding layer having a thickness between 400 nm and 1000 nm with a Mg doping level between 5E17 cm-3 to 5E19 cm-3;
• and
• a p++-type contact layer overlying the p-type cladding layer, the p++-type contact layer having a thickness between 10 nm and 50 nm with a Mg doping level between 5E19 cm-3 and 1E21 cm-3.
• wherein each of the barriers is comprised of InGaN with an InN molar fraction of 1 to 5% and each of the barriers is characterized by a thickness between 2 nm and 4.5 nm.

An optical device comprising:

• a gallium nitride substrate having a semipolar crystalline surface region;
• an n-GaN cladding layer overlying the surface region, the n-GaN cladding layer having a thickness from 100 nm to 3000 nm and a Si doping level of 1E17 to 5E19 cm-3;
• an n-side SCH layer overlying the n-GaN cladding layer, the n-side SCH layer comprised of InGaN and having a molar fraction of indium between 3% and 8%, and a thickness between 20 and 150 nm;
• a multiple quantum well active region overlying the n-side SCH layer, the multiple quantum well active region comprising a plurality of 2.5-6.5 nm InGaN quantum wells separated by 2.5-8.0 nm GaN or InGaN barriers;
• a p-type cladding layer overlying the electron blocking layer, the p-type cladding layer having a thickness between 400 nm and 1000 nm with a Mg doping level between 5E17 cm-3 and 5E19 cm-3;
• a p++-type contact layer overlying the p-type cladding layer, the p++-type contact layer having a thickness from 10 nm to 50 nm with Mg doping level of 5E19 cm-3 to 1E21 cm-3;
• and
• a p-side SCH region overlying the multiple quantum well region, wherein the p-side SCH region is comprised of InGaN with 0 to 7% molar fraction of InN and ranging in thickness from 5 to 70 nm.

An optical device comprising:

• a gallium nitride substrate having a semipolar crystalline surface region;
• an n-GaN cladding layer overlying the surface region, the n-GaN cladding layer having a thickness from 100 nm to 3000 nm and a Si doping level of 1E17 to 5E19 cm-3;
• an n-side SCH layer overlying the n-GaN cladding layer, the n-side SCH layer comprised of InGaN and having a molar fraction of indium between 3% and 8%, and a thickness between 20 and 150 nm;
• a multiple quantum well active region overlying the n-side SCH layer, the multiple quantum well active region comprising a plurality of 2.5-6.5 nm InGaN quantum wells separated by 2.5-8.0 nm GaN or InGaN barriers;
• a p-type cladding layer overlying the electron blocking layer, the p-type cladding layer having a thickness between 400 nm and 1000 nm with a Mg doping level between 5E17 cm-3 and 5E19 cm-3;
• a p++-type contact layer overlying the p-type cladding layer, the p++-type contact layer having a thickness from 10 nm to 50 nm with Mg doping level of 5E19 cm-3 to 1E21 cm-3;
• and
• an electron blocking region overlying the multiple quantum well region, wherein the electron blocking layer is comprised of AlGaN or AlInGaN with 5 to 30% molar fraction of AlN and ranging in thickness between 5 nm and 30 nm.

An optical device comprising:

• a gallium nitride substrate having a semipolar crystalline surface region;
• an n-GaN cladding layer overlying the surface region, the n-GaN cladding layer having a thickness from 100 nm to 3000 nm and a Si doping level of 1E17 to 5E19 cm-3;
• an n-side SCH layer overlying the n-GaN cladding layer, the n-side SCH layer comprised of InGaN and having a molar fraction of indium between 3% and 8%, and a thickness between 20 and 150 nm;
• a multiple quantum well active region overlying the n-side SCH layer, the multiple quantum well active region comprising a plurality of 2.5-6.5 nm InGaN quantum wells separated by 2.5-8.0 nm GaN or InGaN barriers;
• a p-type cladding layer overlying the electron blocking layer, the p-type cladding layer having a thickness between 400 nm and 1000 nm with a Mg doping level between 5E17 cm-3 and 5E19 cm-3;
• and
• a p++-type contact layer overlying the p-type cladding layer, the p++-type contact layer having a thickness from 10 nm to 50 nm with Mg doping level of 5E19 cm-3 to 1E21 cm-3;
• wherein each of the barriers is comprised of InGaN with an InN molar fraction of 1 to 5% and range in thickness ranges from 2 nm to 4.5 nm.