# US 8,415,787 B2 · Integrated circuits having interconnects and heat dissipators based on nanostructures

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- Number: US 8,415,787 B2
- Document ID: US8415787B2
- Status: Granted
- Kind: B2
- Application number: 13/476,417
- Filed: 2012-05-21
- Published: 2012-09-06
- Granted: 2013-04-09
- Earliest claimed: 2005-08-26
- Assignees: Smoltek AB
- Applicants: Mohammad Shafiqul Kabir
- Inventors: Mohammad Shafiqul Kabir
- Web page: https://patentgrep.com/patent/US8415787B2

## CPC

- B01J 23/755: Nickel
- B01J 23/76: combined with metals, oxides or hydroxides provided for in groups B01J23/02 - B01J23/36
- B82Y 10/00: Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
- B82Y 30/00: Nanotechnology for materials or surface science, e.g. nanocomposites
- B82Y 40/00: Manufacture or treatment of nanostructures
- C01B 32/162: characterised by catalysts
- C23C 16/04: Coating on selected surface areas, e.g. using masks
- C23C 16/26: Deposition of carbon only
- D01F 9/08: of inorganic material (working or processing of metal wire B21F; from softened glass, minerals or slags C03B37/00)
- D01F 9/127: by thermal decomposition of hydrocarbon gases or vapours {or other carbon-containing compounds in the form of gas or vapour, e.g. carbon monoxide, alcohols}
- H01B 1/04: mainly consisting of carbon-silicon compounds, carbon or silicon
- H01J 1/304: Field-emissive cathodes
- H01J 3/022: {with microengineered cathode, e.g. Spindt-type}
- H01J 9/025: {of field emission cathodes}
- H10D 62/122: {oriented at angles to substrates, e.g. perpendicular to substrates}
- H10K 71/12: using liquid deposition, e.g. spin coating
- H10K 85/221: {Carbon nanotubes}
- H10W 20/045: {for deposition from the gaseous phase, e.g. for chemical vapour deposition [CVD]}
- H10W 20/063: {by forming conductive members before forming protective insulating material}
- H10W 20/4462: {Carbon or carbon-containing materials, e.g. graphene}
- C01B 2202/34: Length
- C01B 2202/36: Diameter
- H01J 2201/30469: Carbon nanotubes (CNTs)
- H01J 2237/31786: Field-emitting cathode
- H10K 10/462: {Insulated gate field-effect transistors [IGFETs]}
- H10K 85/615: {Polycyclic condensed aromatic hydrocarbons, e.g. anthracene}
- H10W 20/0425: {comprising multiple stacked seed or nucleation layers}
- H10W 20/0554: {of nanotubes or nanowires}
- Y10S 977/734: Fullerenes, i.e. graphene-based structures, such as nanohorns, nanococoons, nanoscrolls or fullerene-like structures, e.g. WS2 or MoS2 chalcogenide nanotubes, planar C3N4, etc.
- Y10S 977/742: Carbon nanotubes, CNTs
- Y10S 977/75: Single-walled
- Y10S 977/814: Group IV based elements and compounds, e.g. CxSiyGez, porous silicon
- Y10S 977/842: for carbon nanotubes or fullerenes
- Y10S 977/86: Scanning probe structure
- B01J: CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B82Y: SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- C01B: NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; {METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C}
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)
- D01F: CHEMICAL FEATURES IN THE MANUFACTURE OF ARTIFICIAL FILAMENTS, THREADS, FIBRES, BRISTLES OR RIBBONS; APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OF CARBON FILAMENTS
- H01B: CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES (selection for magnetic properties H01F1/00; waveguides H01P {; printed circuits H05K})
- H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H)
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- Y10S: TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS

## Abstract

The present invention relates to a heat dissipator that includes a conductive substrate and a plurality of nanostructures supported by the conductive substrate. The nanostructures are at least partly embedded in an insulator. Each of the nanostructures includes a plurality of intermediate layers on the conductive substrate. At least two of the plurality of intermediate layers are interdiffused, and material of the at least two of the plurality of intermediate layers that are interdiffused is present in the nanostructure.

## Claims

### Claim 1

A heat dissipator, comprising:
a conductive substrate; and
a plurality of nanostructures supported by said conductive substrate, said plurality of nanostructures being at least partly embedded in an insulator,
wherein each of said nanostructures comprises:
a plurality of intermediate layers on the conductive substrate, wherein at least two of the plurality of intermediate layers are interdiffused, and wherein material of the at least two of the plurality of intermediate layers that are interdiffused is present in the nanostructure.

### Claim 2 (depends on 1)

The heat dissipator according to claim 1, wherein at least one of the plurality of intermediate layers comprises material selected from the group consisting of amorphous silicon and germanium.

### Claim 3 (depends on 1)

The heat dissipator according to claim 1, wherein each of said nanostructures comprises:
a conducting base layer;
a layer of amorphous silicon on the conducting base layer;
a layer of catalyst on the layer of amorphous silicon; and
a carbon nanostructure disposed on the layer of catalyst.

### Claim 4 (depends on 1)

The heat dissipator according to claim 1, wherein each of said nanostructures comprises:
a conducting base layer;
a layer of amorphous germanium on the conducting base layer;
a layer of catalyst on the layer of amorphous germanium; and
a carbon nanostructure disposed on the layer of catalyst.

### Claim 5 (depends on 1)

An electronic device comprising:
an electronic circuit; and
a heat dissipator according to claim 1 arranged in thermal contact with said electronic circuit.

### Claim 6 (depends on 5)

The electronic device according to claim 5, wherein said heat dissipator is arranged in such a way that said nanostructures are substantially perpendicular to an edge of said electronic circuit.

### Claim 7 (depends on 1)

The heat dissipator according to claim 1, wherein said nanostructure comprises:
a base;
a tip; and
a body between said base and said tip,
wherein said tip comprises material from at least one of said intermediate layers having diffused through said body during growth of said nanostructure.