Micro device transfer head with silicon electrode
AssigneeLuxVue Technology Corporation
InventorsDariusz Golda, Andreas Bibl
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Abstract
A micro device transfer head array and method of forming a micro device transfer array from an SOI substrate are described. In an embodiment, the micro device transfer head array includes a base substrate and a patterned silicon layer over the base substrate. The patterned silicon layer may include a silicon interconnect and an array of silicon electrodes electrically connected with the silicon interconnect. Each silicon electrode includes a mesa structure protruding above the silicon interconnect. A dielectric layer covers a top surface of each mesa structure.
Claims30
A micro device transfer head array comprising:
- a base substrate;
- a patterned silicon layer over the base substrate, the patterned silicon layer including a silicon interconnect and an array of silicon electrodes electrically connected with the silicon interconnect, wherein each silicon electrode includes a mesa structure protruding above the silicon interconnect;
- and
- a dielectric layer covering a top surface of each mesa structure;
- wherein the array of silicon electrodes are integrated into a corresponding array of electrostatic transfer heads, each electrostatic transfer head configured to transfer a separate micro device.
Dependencies are inferred from the claim text.