Compliant monopolar micro device transfer head with silicon electrode
AssigneeLuxVue Technology Corporation
InventorsDariusz Golda, Andreas Bibl
Life of this patent
Estimating the term…
Abstract
A compliant monopolar micro device transfer head array and method of forming a compliant monopolar micro device transfer array from an SOI substrate are described. In an embodiment, the micro device transfer head array including a base substrate and a patterned silicon layer over the base substrate. The patterned silicon layer may include a silicon interconnect and an array of silicon electrodes electrically connected with the silicon interconnect. Each silicon electrode includes a mesa structure protruding above the silicon interconnect, and each silicon electrode is deflectable into a cavity between the base substrate and the silicon electrode. A dielectric layer covers a top surface of each mesa structure.
Claims24
A compliant micro device transfer head array comprising:
- a base substrate;
- a patterned silicon layer over the base substrate, the patterned silicon layer including a silicon interconnect and an array of silicon electrodes electrically connected with the silicon interconnect, wherein each silicon electrode includes an electrode lead and a mesa structure, wherein each mesa structure protrudes above the silicon interconnect and each silicon electrode is deflectable into a cavity between the base substrate and the silicon electrode;
- and
- a dielectric layer covering a top surface of each mesa structure.
Dependencies are inferred from the claim text.