Method for fabricating a structure for a microelectric device

A method for fabricating a structure for a microelectric device, wherein the structure is a capacitor, the method comprising:

• depositing a metal seed layer;
• depositing a resist film after the step of depositing the metal seed layer;
• curing the resist film at a temperature of at least 180 degrees centigrade to provide a cured resist film capable of supporting a line having an aspect ratio of at least ten;
• removing a portion of the cured resist film, a remaining portion of the resist film forming the line;
• depositing an insulating layer after the line is formed;
• removing the line to provide a trench in the insulating layer, the trench having a height and a width, the height divided by the width corresponding to the aspect ratio;
• providing at least a portion of the structure in the trench;
• and
• wherein the step of providing the at least the portion of the structure further includes providing at least one conductive layer in the trench;
• removing a portion of the insulating layer adjacent to the at least one conductive layer;
• depositing an additional insulating layer, the additional insulating layer encapsulating the at least one conductive layer;
• and
• depositing an additional conductive layer on the additional insulating layer.

A method for fabricating a pole for magnetic recording transducer comprising:

• depositing a resist film;
• curing the resist film at a temperature of at least 180 degrees centigrade to provide a cured resist film capable of supporting a line having an aspect ratio of at least ten;
• removing a portion of the cured resist film, a remaining portion of the resist film forming the line;
• depositing a nonmagnetic layer after the line is formed;
• removing the line to provide a trench in the nonmagnetic layer, the trench having a height and a width, the height divided by the width corresponding to the aspect ratio;
• depositing at least one pole layer, the at least one pole layer being magnetic, a portion of the at least one pole layer residing in the trench;
• and
• removing a portion of the nonmagnetic layer adjacent to the at least one pole layer.

A method for fabricating a pole for magnetic recording transducer comprising:

• depositing a polydimethylglutarimide (PMGI) layer on a seed layer residing on a sloped surface;
• depositing a photoresist layer on the PMGI layer, the PMGI layer and the photoresist layer forming a bi-layer resist film;
• curing the bi-layer resist film at a temperature of at least 200 degrees centigrade to provide a cured resist film capable of supporting a line having an aspect ratio of at least twelve, the cured resist film being at least 2.5 micrometers tall;
• providing a hard mask on the cured resist film, the hard mask covering a portion of the cured resist film corresponding to the line;
• removing a portion of the cured resist film exposed by the hard mask, a remaining portion of the resist film forming the line;
• depositing an aluminum oxide layer after the line is formed;
• planarizing the aluminum oxide layer;
• reactive ion etching a portion of the line corresponding to the photoresist layer;
• wet etching the line, providing a trench in the aluminum oxide layer corresponding to the line;
• plating at least one pole layer, the at least one pole layer being magnetic, a portion of the at least one pole layer residing in the trench and having a height and a width, the height being at least twelve times the width;
• removing a portion of the nonmagnetic layer adjacent to the at least one pole layer;
• removing a portion of the seed layer exposed by the pole;
• and
• performing an aluminum oxide backfill.