Structure, design structure and process for increasing magnitude of device threshold voltage for low power applications
AssigneeInternational Business Machines Corporation
InventorWagdi W. Abadeer
Life of this patent
Estimating the term…
Abstract
A method of increasing an initial threshold voltage (Vt) of selected devices. The method includes designing devices with desired antenna effects and adjusting an increase in Vt of some devices to specific values. The desired antenna effects produce a desired threshold voltage of the devices.
Claims23
A method of increasing an initial threshold voltage (Vt) of selected devices, comprising:
- designing devices with desired antenna effects;
- adjusting an increase in Vt of some devices to specific values;
- and
- meeting reliability objectives for hot carriers and negative bias temperature instability (NBTI) utilizing specific antenna rules, wherein:
- the desired antenna effects produce a desired threshold voltage of the devices;
- and
- at least one of the designing the devices and the adjusting an increase in Vt of some devices is performed using a computing device.
A method of increasing an initial threshold voltage (Vt) of selected devices, comprising:
- designing devices with different antenna effects;
- increasing Vt of some devices of the devices to specific values based on the antenna effects;
- and
- meeting reliability objectives for hot carriers and negative bias temperature instability (NBTI) utilizing specific antenna rules, wherein at least one of the designing the devices and the increasing in the Vt of some devices is performed using a computing device.
A design process for designing, manufacturing, or testing an integrated circuit in a computing device, wherein the design process comprises translating inputs into a design structure embodied in a machine readable storage medium utilized by the computing device, the design structure comprising:
- devices with different antenna effects;
- and
- other devices with different antenna effects on different wiring levels,
- wherein antenna effects of some of the devices are changed in order to increase Vt of selected devices to specific values and to meet reliability objectives for hot carriers and negative bias temperature instability (NBTI) utilizing specific antenna rules.
Dependencies are inferred from the claim text.