Self heating monitor for SiGe and SOI CMOS devices
AssigneeInternational Business Machines Corporation
InventorsPaul A. Hyde, Edward J. Nowak
Life of this patent
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Abstract
A structure, apparatus and method for deterring the temperature of an active region in semiconductor, particularly a FET is provided. A pair FETs are arranged on a silicon island a prescribed distance from one another where the silicon island is surrounded by a thermal insulator. One FET is heated by a current driven therethrough. The other FET functions as a temperature sensor by having a change in an electrical characteristic versus temperature monitored. By arranging multiple pairs of FETs separated by different known distances, the temperature of the active region of one of the FETs may be determined during operation at various driving currents.
Claims13
A computer program product comprising a non-transitory computer readable storage medium having readable program code embodied in the medium, the computer program product includes at least one component operable to:
- measure a change in at least one electrical characteristic of a first sensing device caused by heat generated at a first heating device;
- calculate a temperature of the first heating device using the measured change in the at least one electrical characteristic;
- determine an offset between the first heating device and at least a second heating device, each having a different number of contacts;
- and
- extrapolate the offset to zero contacts.
Dependencies are inferred from the claim text.