Process and system for laser crystallization processing of film regions on a substrate to minimize edge areas, and structure of such film regions

A system for processing a thin film sample, comprising:

• a thin film sample having an area and a thickness;
• a beam generator to emit at least one beam pulse;
• a mask to mask the at least one beam pulse and to produce at least one masked beam pulse to irradiate the thin film sample, wherein the at least one masked beam pulse has sufficient intensity to completely melt at least one portion of the thin film sample throughout its thickness and across its entire area;
• and
• a processing arrangement which is configured to:
• (a) control the beam generator to emit at least one beam pulse;
• (b) mask the at least one beam pulse with the mask to produce the at least one masked beam pulse, wherein the at least one masked beam pulse is used to irradiate at least one portion of the film sample;
• and
• (c) with the at least one masked beam pulse, initiate an irradiation of the at least one portion of the film sample with the sufficient intensity for the at least one portion to later crystallize
• wherein the at least one portion of the thin film sample is allowed to crystallize, the crystallized at least one portion being composed of a first area having a predetermined distance and a second area having a width, wherein, upon the crystallization thereof, the first area includes a first set of grains, and the second area includes a second set of grains whose at least one characteristic is different from at least one characteristic of the first set of grains,
• wherein the first area surrounds the second area, and is configured to allow an active region of an electronic device to be provided at a distance therefrom and sized such that the predetermined distance of the first area is at least ten times smaller than the width of the second area.