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US 8,411,511 B2Granted
Reading data from memory cells including storing charges to analog storage devices
AssigneeMicron Technology, Inc.
InventorFrankie F. Roohparvar
Life of this patent
Estimating the term…
Abstract
Methods of reading data from memory cells. Such methods include subjecting an analog storage device to a voltage level indicative of a threshold voltage of a memory cell to store a charge to the analog storage device, and generating an analog voltage from the stored charge.
Claims20
A method of reading data from a memory cell, comprising:
- subjecting an analog storage device to a voltage level indicative of a threshold voltage of the memory cell to store a charge to the analog storage device;
- generating an analog voltage from the stored charge;
- and
- outputting the analog voltage.
1 more element
A method of reading data from a memory device, comprising:
- subjecting a plurality of capacitors to voltage levels indicative of threshold voltages of memory cells to store a corresponding charge to each of the capacitors;
- generating a corresponding analog voltage from each of the stored charges;
- and
- generating an analog data stream of the analog voltages.
1 more element
Dependencies are inferred from the claim text.