Flash memory device, memory system and method of operating the same
AssigneeSamsung Electronics Co., Ltd.
InventorsHong-Rak Son, Han-Woong Yoo, Jun-Jin Kong, Hee-Seok Eun
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Abstract
A memory system includes a memory device and a data converting device. The memory device includes a memory cell array which includes a plurality of memory cells. The data converting device includes an encoding device. The encoding device converts input data into converted data by changing a bandwidth corresponding to the input data, and provides the converted data to the memory device. Accordingly, the memory system is capable of improving the reliability of programmed data by changing the bandwidth corresponding to data to be programmed. A method of storing data in a memory system is also disclosed.
Claims20
A memory system comprising:
- a memory device including a non-volatile memory cell array which includes a plurality of memory cells, the memory device configured to alter a threshold value of corresponding ones of the plurality of memory cells to store corresponding data, wherein further programming of one or more neighboring cells of a first memory cell being effective to alter a reading of the threshold value of the first cell;
- and
- a data converting device including an encoding device configured to convert input data into converted data by lowering a bandwidth corresponding to the input data, and configured to provide the converted data to the memory device, the bandwidth representing a range of a threshold variation per unit length of a line of memory cells along a length of the memory device when corresponding data were to be stored in the line of memory cells.
A flash memory device comprising:
- a flash memory;
- and
- a flash memory controller, the flash memory controller including an encoder and a decoder, the encoder operative to receive data from a host system, encode the received data and provide the encoded data to the flash memory during a program operation of the flash memory to store the encoded data to a page of the flash memory, the decoder operative to receive encoded data from the flash memory, decode the encoded data from the flash memory during a read operation,
- wherein the encoding by the encoder is operative to reduce an amount of threshold voltage variations between adjacent cells of the page of the flash memory storing the encoded data that as compared to an amount of threshold voltage variations between adjacent cells of the page of the flash memory which would have occurred upon storing the received data without conversion by the encoder.
A method of operating a flash memory device, comprising:
- receiving input data, data elements of the input data being represented in a sequence of data elements of the input data, each data element having one of a plurality of threshold voltages to represent the input data in a multi-level cell flash memory;
- converting the input data to converted data, the converted data being represented in a sequence of data elements of the converted data, each data element of the converted data having one of the plurality of threshold voltages to represent the converted data in the multi-level cell flash memory;
- and
- storing the converted data in a page of flash memory in a sequence of memory cells along the page of flash memory corresponding to the sequence of data elements of the converted data,
- wherein converting the input data to converted data includes reducing an amount of threshold variations among adjacent cells along the page of flash memory as compared to an amount of threshold variations among adjacent memory cells along the page of flash memory which would have occurred if the received input data had been stored in the page of the flash memory in the sequence of data elements of the input data.
Dependencies are inferred from the claim text.