Compensating for coupling during programming
AssigneeSanDisk Technologies LLC
InventorYan Li Li
Life of this patent
Estimating the term…
Abstract
Shifts in the apparent charge stored on a floating gate (or other charge storing element) of a non-volatile memory cell can occur because of the coupling of an electric field based on the charge stored in adjacent floating gates (or other adjacent charge storing elements). To compensate for this coupling, the read or programming process for a given memory cell can take into account the programmed state of an adjacent memory cell. To determine whether compensation is needed, a process can be performed that includes sensing information about the programmed state of an adjacent memory cell (e.g., on an adjacent bit line or other location).
Claims25
A non-volatile storage system, comprising:
- a plurality of non-volatile storage elements, the plurality of non-volatile storage elements include a first non-volatile storage element and a second non-volatile storage element;
- and
- one or more circuits that program the non-volatile storage elements, the one or more circuits program the first non-volatile storage element to store first data and program the second non-volatile storage element to store second data in parallel with the programming of the first non-volatile storage element to store first data, the programming of the first non-volatile storage element to store first data is based on the second data.
A non-volatile storage system, comprising:
- a plurality of non-volatile storage elements, the plurality of non-volatile storage elements include a first non-volatile storage element and a second non-volatile storage element;
- and
- one or more circuits that program the non-volatile storage elements including programming the first non-volatile storage element to store first data and programming the second non-volatile storage element to store second data;
- the one or more circuits access first data to be stored into the first non-volatile storage element;
- the one or more circuits determining whether to adjust programming of the first data into the first non-volatile storage element based on the second data to be programmed into the second non-volatile storage element;
- and
- the one or more circuits programming the first data into the first non-volatile storage element, the programming of the first data into the first non-volatile storage element includes an adjustment if the determining concluded that the programming of the first data into the first non-volatile storage element should be adjusted.
A non-volatile storage system, comprising:
- a plurality of non-volatile storage elements;
- and
- one or more circuits applying a predetermined dose of programming voltage to a group of non-volatile memory cells in parallel to increase a threshold voltage of each non-volatile memory cell under programming;
- the one or more circuits sensing each non-volatile memory cell of the group in parallel to verify its memory state relative to a respective target state, the sensing determines the threshold voltage of each non-volatile memory cell relative to a predetermined verify level, the predetermined verify level being a function of the respective target state and the target states of one or more neighboring non-volatile memory cells;
- and
- the one or more circuits inhibiting from further programming each non-volatile memory cell in the group that has been verified.
A non-volatile storage system, comprising:
- a plurality of non-volatile storage elements, the plurality of non-volatile storage elements include a first non-volatile storage element and a second non-volatile storage element;
- and
- one or more circuits that program the non-volatile storage elements including programming the first non-volatile storage element to store first data and programming the second non-volatile storage element to store second data, wherein the first non-volatile memory element is programmed with an adjustment calculated from the second data.
Dependencies are inferred from the claim text.