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US 8,411,502 B2Granted
Flash memory device using adaptive program verification scheme and related method of operation
AssigneeSamsung Electronics Co., Ltd.
InventorsSang Yong Yoon, Ki Tae Park, Moo Sung Kim, Bo Geun Kim, Hyun jun Yoon
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Abstract
A method of programming a flash memory device comprises programming selected memory cells, performing a verification operation to determine whether the selected memory cells have reached a target program state, and determining a start point of the verification operation based on a programming characteristic associated with a detection of a pass bit during programming of an initial program state.
Claims20
A method of programming a flash memory device, comprising:
- (a) programming selected memory cells;
- (b) performing a verification operation to determine whether threshold voltages of the selected memory cells have reached verification levels corresponding to target program states;
- (c) determining a verification start point for at least one of the target program states according to a parameter associated with a detection of an initial pass bit in the selected memory cells;
- and
- (d) determining a verification end point for at least one of the target program states according to a parameter associated with a detection of successful programming of multiple selected memory cells to a lowest one of the target program states.
2 more elements
A method of programming a flash memory device, comprising:
- programming selected memory cells;
- performing a verification operation to determine whether threshold voltages of the selected memory cells have reached verification levels of target program states;
- and
- determining a verification start point to be used for each of the target program states in the verification operation according to a programming characteristic associated with an initial pass bit detected during programming of an initial program state in the selected memory cells.
1 more element
Dependencies are inferred from the claim text.