Magnetic tunnel junction devices, electronic devices including a magnetic tunneling junction device and methods of fabricating the same
AssigneesSamsung Electronics Co., Ltd., Gwangju Institute of Science and Technology
InventorsKwang-seok Kim, Kee-won Kim, Sun-ae Seo, Seung-kyo Lee, Young-man Jang
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Abstract
Perpendicular magnetic tunnel junction (MTJ) devices, methods of fabricating a perpendicular MTJ device, electronic devices including a perpendicular MTJ device and methods of fabricating the electronic device are provided, the perpendicular MTJ devices include a pinned layer, a tunneling layer and a free layer. At least one of the pinned layer and the free layer includes a multi-layered structure including an amorphous perpendicular magnetic anisotropy (PMA) material.
Claims24
A perpendicular magnetic tunnel junction (MTJ) device, comprising:
- a pinned layer;
- a pinning layer under the pinned layer;
- a tunneling layer on the pinned layer;
- and
- a free layer on the tunneling layer,
- wherein at least one of the pinned layer and the free layer has a multi-layered structure including an amorphous perpendicular magnetic anisotropy (PMA) material.
A method of manufacturing a perpendicular magnetic tunnel junction (MTJ) device, the method comprising:
- stacking a pinning layer, a pinned layer, a tunneling layer and a free layer sequentially on a substrate;
- patterning the pinning layer, the pinned layer, the tunneling layer, and the free layer to form an MTJ pattern;
- and
- annealing the MTJ pattern,
- wherein at least one of the pinned layer and the free layer is formed to have a multi-layered structure including an amorphous perpendicular magnetic anisotropy (PMA) material.
Dependencies are inferred from the claim text.