Method and system for providing a magnetic field aligned spin transfer torque random access memory

A magnetic memory comprising:

• a plurality of magnetic storage cells, each of the plurality of magnetic storage cells including at least one magnetic element;
• a plurality of bit lines coupled with the plurality of magnetic storage cells and being configured to drive at least one write current through at least one selected storage cell of the plurality of magnetic storage cells to write to the at least one selected storage cell;
• a plurality of preset lines for driving at least one preset current in proximity to but not through the at least one selected storage cell, the at least one preset current generating at least one magnetic field to orient the at least one magnetic element of the at least one selected storage cell in a direction;
• a plurality of word lines coupled with the plurality of magnetic storage cells and configured to enable the at least one selected storage cell for writing;
• wherein either the plurality of bit lines resides between the plurality of preset lines and the plurality of storage cells or the plurality of preset lines resides between the plurality of storage cells and on a storage cell side of the plurality of bit lines;
• wherein each of the plurality of preset lines is along a preset line direction and wherein each of the plurality of preset line extends over at least two of the plurality of storage cells in a direction substantially perpendicular to the preset line direction.

A magnetic memory comprising

• a plurality of magnetic storage cells, each of the plurality of magnetic storage cells including at least one magnetic element;
• a plurality of bit lines coupled with the plurality of magnetic storage cells and being configured to drive at least one write current through at least one selected storage cell of the plurality of magnetic storage cells to write to the at least one selected storage cell;
• a plurality of preset lines for driving at least one preset current in proximity to but not through the at least one selected storage cell, the at least one preset current generating at least one magnetic field to orient the at least one magnetic element of the at least one selected storage cell in a direction;
• a plurality of word lines coupled with the plurality of magnetic storage cells and configured to enable the at least one selected storage cell for writing;
• wherein either the plurality of bit lines resides between the plurality of preset lines and the plurality of storage cells or the plurality of preset lines resides between the plurality of storage cells and on a storage cell side of the plurality of bit lines;
• wherein each of the at least one magnetic element has an easy axis and wherein the at least one magnetic field is substantially perpendicular to the easy axis, and wherein each of the plurality of preset lines is along a preset line direction and wherein each of the plurality of preset line extends over at least two of the plurality of storage cells in a direction substantially perpendicular to the preset line direction.

A method for programming magnetic memory including a plurality of magnetic storage cells, a plurality of bit lines, and a plurality of storage cells, each of the plurality of magnetic storage cells including at least one magnetic element programmable by at least one write current driven through the at least one magnetic element, the plurality of bit lines being coupled with the plurality of magnetic storage cells and configured to drive the at least one write current through at least one selected storage cell to write to the at least one selected storage cell, the method comprising:

• driving at least one preset current in at least one preset line of the plurality of preset lines in proximity to but not through at least one selected storage cell, the at least one preset current generating at least one magnetic field to orient the at least one magnetic element of the at least one selected storage cell in a direction, at least one of the plurality of bit lines residing between the plurality of preset lines and the plurality of storage cells and the plurality of preset line residing between the plurality of storage cells and on a storage cell side of the plurality of bit lines, the step of driving the at least one preset current further including terminating the at least one preset current;
• and
• driving the at least one write current through the at least one selected storage cell after the present current starts being driven through the at least one preset lines, the step of driving the at least one write current commencing after the step of terminating the at least one preset current completes and such that the at least one selected magnetic element has insufficient time to relax to an equilibrium state before the at least one write current starts being driven through the at least one selected storage cell.

A method for programming magnetic memory including a plurality of magnetic storage cells, a plurality of bit lines, and a plurality of storage cells, each of the plurality of magnetic storage cells including at least one magnetic element programmable by at least one write current driven through the at least one magnetic element, the plurality of bit lines being coupled with the plurality of magnetic storage cells and configured to drive the at least one write current through at least one selected storage cell to write to the at least one selected storage cell, the method comprising:

• driving at least one preset current in at least one preset line of the plurality of preset lines in proximity to but not through at least one selected storage cell, the at least one preset current generating at least one magnetic field to orient the at least one magnetic element of the at least one selected storage cell in a direction, at least one of the plurality of bit lines residing between the plurality of preset lines and the plurality of storage cells and the plurality of preset line residing between the plurality of storage cells and on a storage cell side of the plurality of bit lines;
• driving the at least one write current through the at least one selected storage cell after the present current starts being driven through the at least one preset lines;
• wherein each of the plurality of preset lines is along a preset line direction and wherein each of the plurality of preset lines extends over at least two of the plurality of storage cells in a direction substantially perpendicular to the present line direction such that the at least one magnetic field orients the magnetic element of at least two selected storage cells.