Selection device for a spin-torque transfer magnetic random access memory
AssigneeHoneywell International Inc.
InventorRomney R. Katti
Life of this patent
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Abstract
A spin-torque transfer magnetic random access memory (STT-MRAM) that includes a magnetic bit coupled between a first conductor line and a selection device. The selection device includes at least two transistors. The selection device is operative to (a) select the magnetic bit for a spin-torque transfer (STT) write operation when the at least two transistors are in a first state and (b) select the magnetic bit for a read operation when the at least two transistors are in a second state. The selection device may be implemented in silicon-on-insulator (SOI) complementary metal-oxide-semiconductor (CMOS) technology, and the transistors may include body ties. The selection device may also be radiation hardened.
Claims14
A spin-torque transfer magnetic random access memory (STT-MRAM) comprising:
- a first conductor line;
- a selection device;
- and
- a magnetic bit coupled between the first conductor line and the selection device, wherein:
- the selection device includes at least a first transistor and a second transistor arranged in a series configuration;
- the selection device is operative to select the magnetic bit for a spin-torque transfer (STT) write operation when the at least the first transistor and the second transistor are in a first state, wherein, in the first state, the first transistor and the second transistor are fully enabled;
- and
- the selection device is operative to select the magnetic bit for a read operation when the at least the first transistor and the second transistor are in a second state, wherein, in the second state, the first transistor is partially enabled and the second transistor is fully enabled.
A spin-torque transfer magnetic random access memory (STT-MRAM) comprising:
- a first conductor line;
- a selection device;
- and
- a magnetic bit coupled between the first conductor line and the selection device, wherein:
- the selection device includes a first transistor and a second transistor arranged in a parallel configuration;
- the selection device is operative to select the magnetic bit for a spin-torque transfer (STT) write operation when the first transistor is enabled and the second transistor is enabled;
- and
- the selection device is operative to select the magnetic bit for a read operation when the first transistor is disabled and the second transistor is enabled.
A spin-torque transfer magnetic random access memory (STT-MRAM) comprising:
- a first conductor line;
- a selection device;
- and
- a magnetic bit coupled between the first conductor line and the selection device, wherein:
- the selection device includes a first transistor and a second transistor arranged in a series configuration;
- the selection device is operative to select the magnetic bit for a spin-torque transfer (STT) write operation when the first transistor and the second transistor are fully enabled;
- and
- the selection device is operative to select the magnetic bit for a read operation when the first transistor is partially enabled and the second transistor is at least partially enabled.
Dependencies are inferred from the claim text.