Semiconducting devices and methods of preparing
AssigneeEastman Kodak Company
InventorsDeepak Shukla, Dianne M. Meyer, Wendy G. Ahearn
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Abstract
An amic acid or amic ester precursor can be applied to a substrate to form a thin film, and is then thermally converted into a semiconducting layer of the corresponding arylene diimide. This semiconducting thin film can be used in various articles including thin-film transistor devices that can be incorporated into a variety of electronic devices. In this manner, the arylene diimide need not be coated onto the substrate but is generated in situ from a solvent-soluble, easily coated precursor compound.
Claims19
A thin-film transistor device comprising a gate dielectric layer, a gate electrode, a source electrode, a thin organic semiconductor film, and a drain electrode,
- wherein the dielectric layer, the gate electrode, the thin film of organic semiconductor material, source electrode, and the drain electrode are in any sequence as long as the gate electrode and thin organic semiconductor film both contact the dielectric layer, and the source electrode and the drain electrode both contact the thin film of the organic semiconducting composition, and
- wherein the thin organic semiconductor film is continuous and polycrystalline and comprises an arylene diimide compound that is the product from thermal dehydration imidization conversion of an amic acid or amic ester precursor thereof.
Dependencies are inferred from the claim text.