Non-volatile variable capacitive device including resistive memory cell
AssigneeCrossbar, Inc.
InventorsHagop Nazarian, Sung Hyun Jo
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Abstract
A non-volatile variable capacitive device includes a capacitor defined over a substrate, the capacitor having an upper electrode and a resistive memory cell having a first electrode, a second electrode, and a switching layer provided between the first and second electrodes. The resistive memory cell is configured to be placed in a plurality of resistive states according to an electrical signal received. The upper electrode of the capacitive device is coupled to the second electrode of the resistive memory cell. The resistive memory cell is a two-terminal device.
Claims20
A non-volatile variable capacitive device, comprising:
- a capacitive device defined over a substrate, the capacitive device having an upper electrode;
- and
- a resistive memory cell having a first electrode, a second electrode, and a switching layer provided between the first and second electrodes, the resistive memory cell being configured to be placed in first and second resistive states according to electrical signals received, the resistive memory cell configured to behave substantially as a resistor in the first state and substantially as a capacitor in the second state,
- wherein the upper electrode of the capacitive device is coupled to the second electrode of the resistive memory cell, and
- wherein the resistive memory cell is a two-terminal device.
A non-volatile variable capacitive device, comprising:
- a capacitive device having upper and lower electrodes;
- and
- a memory cell having a first electrode, a second electrode, and an insulating layer provided between the first and second electrodes, the memory cell being configured to be placed in first and second states according to electrical signals received, the memory cell configured to behave substantially as a resistor in the first state and substantially as a capacitor in the second state,
- wherein the upper electrode of the capacitive device is coupled to the second electrode of the memory cell.
Dependencies are inferred from the claim text.