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US 8,411,459 B2Granted
Interposer-on-glass package structures
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChen-Hua Yu, Jing-Cheng Lin
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Abstract
A device includes an interposer including a substrate, and a first through-substrate via (TSV) penetrating through the substrate. A glass substrate is bonded to the interposer through a fusion bonding. The glass substrate includes a second TSV therein and electrically coupled to the first TSV.
Claims13
A device comprising:
- an interposer comprising:
- a substrate;
- and
- a first through-substrate via (TSV) penetrating through the substrate;
- a glass substrate bonded to the interposer, wherein the glass substrate comprises a second TSV therein and electrically coupled to the first TSV;
- a silicon nitride layer between the interposer and the glass substrate, wherein the silicon nitride layer contacts the substrate in the interposer;
- and
- an oxide layer between the silicon nitride layer and the glass substrate.
5 more elements
A device comprising:
- an interposer comprising:
- a silicon substrate;
- and
- a first plurality of through-substrate vias (TSVs) penetrating through the silicon substrate;
- a glass substrate bonded to the interposer, wherein the glass substrate comprises a second plurality of TSVs therein, with the first plurality of TSVs being electrically coupled to the second plurality of TSVs;
- an etch stop layer between the interposer and the glass substrate;
- and
- an oxide layer between the etch stop layer and the glass substrate, wherein the second plurality of TSVs penetrates through the oxide layer.
5 more elements
Dependencies are inferred from the claim text.