Magneto resistive effect element with a magnetic film generating spin fluctuation of conduction electrons

A resonant magneto-resistance effect element comprising:

• a first stacked structure comprising:
• a first magnetic film whose magnetization direction is substantially perpendicular to a stacking direction of the first stacked structure;
• a second magnetic film whose magnetization direction is substantially parallel to the stacking direction of the first stacked structure;
• and a first non-magnetic film provided between the first and second magnetic films;
• a second stacked structure comprising:
• a third magnetic film whose magnetization direction is substantially perpendicular to a stacking direction of the second stacked structure;
• a fourth magnetic film whose magnetization direction is substantially parallel to the stacking direction of the second stacked structure;
• and a second non-magnetic film provided between the third and fourth magnetic films;
• and
• a third non-magnetic film provided between the first stacked structure and the second stacked structure,
• wherein by flowing a current between the first and second stacked structures via the third non-magnetic film, in a direction parallel to the stacking directions of the first and second stacked structures, the first magnetic film generates spin fluctuation of conduction electrons and the spin fluctuation of conduction electrons is injected into the second magnetic film via the first non-magnetic film, thereby inducing magnetic resonance on the second magnetic film, and/or the third magnetic film generates spin fluctuation of conduction electrons and the spin fluctuation of conduction electrons is injected into the fourth magnetic film via the second non-magnetic film, thereby inducing magnetic resonance on the fourth magnetic film.