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US 8,410,893 B2Granted
Magnetic detector and method for manufacturing the same
AssigneeAlps Electric Co., Ltd.
InventorsHideaki Kawasaki, Masamichi Saito, Yoshihiro Nishiyama, Kenji Ichinohe, Yosuke Ide
Life of this patent
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Abstract
A first short-circuit layer and a second short-circuit layer are electrically connected to and integrally stacked onto only a first magnetoresistance effect element layer and a first resistance element layer, respectively, so as to achieve short-circuiting, and thereby adjusting electrical resistances of the first magnetoresistance effect element layer and the first resistance element layer.
Claims17
A magnetic detector comprising:
- a first magnetoresistance effect element layer having an electrical resistance which changes in response to an external magnetic field;
- a first resistance element layer connected in series to the first magnetoresistance effect element layer;
- a first short-circuit layer that is conductive, the first short-circuit layer forming a short-circuit path having a first short-circuit length;
- and
- a second short-circuit layer that is conductive, the second short-circuit layer forming a short-circuit path having a second short-circuit length,
- wherein the first short-circuit layer is disposed on and electrically connected to one of the first magnetoresistance effect element layer and the first resistance element layer,
- wherein the second short-circuit layer is disposed on and electrically connected to the other of the first magnetoresistance effect element layer, and
- wherein a difference between the first short-circuit length and the second short-circuit length adjusts a difference between the electrical resistance of the first magnetoresistance effect element layer and an electrical resistance of the first resistance element layer.
5 more elements
A method for manufacturing a magnetic detector including:
- a first magnetoresistance effect element layer having an electrical resistance which changes in response to an external magnetic field;
- a first resistance element layer connected in series to the first magnetoresistance effect element layer;
- a first short-circuit layer that is conductive, disposed on and electrically connected to one of the first magnetoresistance effect element layer and the first resistance element layer so as to form a short-circuit path;
- a second short-circuit layer that is conductive, disposed on and electrically connected to the other of the first magnetoresistance effect element layer and the first resistance element layer so as to form a short-circuit path,
- the method comprising:
- (a) forming the first magnetoresistance effect element layer and the first resistance element layer;
- (b) measuring respective electrical resistances of the first magnetoresistance effect element layer and the first resistance element layer, and determining a difference between the electrical resistances, the difference being caused by variations of a process;
- and
- (c) adjusting the electrical resistances of the first magnetoresistance effect element layer and the first resistance element layer by:
- disposing the second short-circuit layer on a selected location of one of the first magnetoresistance effect element layer and the first resistance element layer which has a higher electrical resistance than the other;
- and
- disposing the first short-circuit layer on a selected location of the other of the first magnetoresistance effect element layer and the first resistance element layer which has a lower electrical resistance.
9 more elements
A magnetic detector comprising:
- a first magnetoresistance effect element layer having a first electrical resistance which changes in response to an external magnetic field;
- a first resistance element layer connected in series to the first magnetoresistance effect element layer, the first resistance element having a second electrical resistance;
- a first short-circuit layer disposed on and electrically connected to the first magnetoresistance effect element layer, the first short-circuit layer having a first short-circuit length along a longitudinal direction of the first mangetoresistance effect layer to adjust the first electrical resistance;
- and
- a second short-circuit layer disposed on and electrically connected to the first resistance element layer, the second short-circuit layer having a second short-circuit length along a longitudinal direction of the first resistance element layer to adjust the second electric resistance,
- wherein a difference between the first short-circuit length and the second short-circuit length compensates a difference between the first electrical resistance of the first magnetoresistance effect element layer and the second electrical resistance of the first resistance element layer.
3 more elements
Dependencies are inferred from the claim text.