Drive amplifier
AssigneeSamsung Electronics Co., Ltd.
InventorsYoung-Taek Lee, Si-Bum Jun, Jong-Soo Lee
Life of this patent
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Abstract
A drive amplifier having improved linearity while being characterized by low current consumption. The drive amplifier includes first and second transistors having a gate to which first and second differential Radio Frequency (RF) voltages are respectively input; a third transistor which has a drain connected to a drain of the second transistor and a source connected to the gate of the first transistor, and a drain-source current which increases with an increase in the second differential RF voltage; and a fourth transistor which has a drain connected to a drain of the first transistor and a source connected to the gate of the second transistor, and a drain-source current which increases with an increase in the first differential RF voltage.
Claims14
A drive amplifier comprising:
- first and second transistors each including a gate to which first and second differential Radio Frequency (RF) voltages are respectively input;
- a third transistor including a drain connected to a drain of the second transistor and a source connected to the gate of the first transistor, wherein a drain-source current of the third transistor increases with an increase in the second differential RF voltage;
- and
- a fourth transistor including a drain connected to a drain of the first transistor and a source connected to the gate of the second transistor, wherein a drain-source current of the fourth transistor increases with an increase in the first differential RF voltage.
A drive amplifier comprising:
- first and second transistors each including a gate to which first and second differential Radio Frequency (RF) voltages are respectively input;
- a third transistor including a drain connected to a drain of the second transistor and a source connected to the gate of the first transistor, wherein a drain-source current of the third transistor increases with an increase in the second differential RF voltage;
- and
- a fourth transistor including a drain connected to a drain of the first transistor and a source connected to the gate of the second transistor, wherein a drain-source current of the fourth transistor increases with an increase in the first differential RF voltage,
- wherein the voltages are determined by:
- Vin+=Vcm+Vdiff/2
- Vin−=Vcm−Vdiff/2
- where Vcm denotes a common mode DC voltage, that is Vg, and Vdiff denotes the differential voltage between the two input voltages Vin+, Vin−[(Vin+)−(Vin−)].
Dependencies are inferred from the claim text.