US 8,410,613 B2 · Semiconductor device having groove-shaped pattern

Abstract

The semiconductor device has insulating films 40, 42 formed over a substrate 10; an interconnection 58 buried in at least a surface side of the insulating films 40, 42; insulating films 60, 62 formed on the insulating film 42 and including a hole-shaped via-hole 60 and a groove-shaped via-hole 66a having a pattern bent at a right angle; and buried conductors 70, 72a buried in the hole-shaped via-hole 60 and the groove-shaped via-hole 66a. A groove-shaped via-hole 66a is formed to have a width which is smaller than a width of the hole-shaped via-hole 66. Defective filling of the buried conductor and the cracking of the inter-layer insulating film can be prevented. Steps on the conductor plug can be reduced. Accordingly, defective contact with the upper interconnection layer and the problems taking place in forming films can be prevented.

Claims36

Dependent claims

A semiconductor device comprising:

a first insulating film formed above a substrate;
a first interconnection buried in the first insulating film;
a second insulating film formed above the first insulating film with the first interconnection;
more than two groove-shaped patterns formed in the second insulating film, the groove-shaped patterns including a first pattern which has a first bent portion with a first angle in a plan view, a second pattern which has a second bent portion with a second angle that is larger than the first angle in a plan view and a third bent portion which has a third angle that is larger than the first angle in a plan view;
and
a conductive layer formed in the first and the second pattern, the conductive layer electrically coupling to the first interconnection.

3 more elements

Dependencies are inferred from the claim text.

Facts

Application

13/013,103Filed 25 Jan 2011 · division

Priority

JP 2002-22334331 Jul 2002

Published

US 2011/0115091 A119 May 2011

Granted

2 Apr 2013

Term ends

Not estimatedThe source records don’t support an estimate.

Classification21 codes

H10W 20/056
Of conductive parts of the interconnections: by filling conductive material into holes, grooves or trenches
H10D 62/102
Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies: constructional design…
H10D 62/103
Constructional design considerations for preventing surface leakage or controlling electric field concentration: for increasing or controlling the…
H10D 62/106
By having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination…

Family

Application10/622,614Parent of this division · filed 21 Jul 2003

Application11/898,548Parent of this division · filed 13 Sep 2007

US 7,301,241 B2Parent of this division · filed 27 Nov 2007

US 2011/0115091 A1Pre-grant publication · published 19 May 2011

US 7,906,851 B2Parent of this division

US 2004/0021227 A1Published application

US 2008/0012147 A1Published application

US 8,410,613 B2This patent

From the US filing history. Foreign family members aren’t listed.

Semiconductor device having groove-shaped pattern

Life of this patent

Semiconductor device having groove-shaped pattern

Life of this patent

Abstract

Claims36