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US 8,410,608 B2Granted
Interconnect structure device
AssigneeKabushiki Kaisha Toshiba
InventorsMakoto Wada, Yuichi Yamazaki
Life of this patent
Estimating the term…
Abstract
According to one embodiment, a device includes an insulating layer with a first trench, a first interconnect layer in the first trench, the first interconnect layer including copper and includes a concave portion, and a first graphene sheet on an inner surface of the concave portion.
Claims15
A device comprising:
- a first insulating layer with a first trench;
- a first interconnect layer in the first trench, the first interconnect layer including copper and a concave portion in the copper of the first interconnect layer;
- and
- a first graphene sheet on an inner surface of the concave portion.
1 more element
Dependencies are inferred from the claim text.