Semiconductor device with protecting film and method of fabricating the semiconductor device with protecting film

A method of fabricating a semiconductor device comprising:

• forming a substrate;
• forming a source trace, a drain trace, and a gate trace on the substrate;
• forming a transistor on the drain trace, the transistor including a source pad and a gate pad;
• forming insulating films between the source and drain traces and between the gate and drain traces on the substrate, the insulating films covering sidewall surfaces of the transistor;
• forming a source spray electrode on the insulating film between the source and drain traces, the source spray electrode connecting the source pad of the transistor and the source trace;
• forming a gate spray electrode on the insulating film between the gate and drain traces, the gate spray electrode connecting the gate pad of the transistor and the gate trace, wherein
• the forming the source spray electrode and the forming the gate spray electrode include:
• attaching masking tapes to the source trace, the gate trace, and the transistor;
• forming the source and gate spray electrodes simultaneously with a spray technique;
• and
• removing the masking tapes.