Semiconductor device and method for producing the same
AssigneeInfineon Technologies AG
InventorsRalf Otremba, Xaver Schloegel
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes a vertical transistor and an external contact plane. The transistor includes: a first side with a first load electrode and a control electrode, and an opposite second side with a second load electrode. The first side of the transistor faces the external contact plane. A dielectric layer extends from at least one edge side of the transistor as far as the second load terminal. An electrically conductive deposited layer is arranged on the dielectric layer and electrically connects the second load electrode to the second load terminal.
Claims32
A semiconductor device, comprising:
- a vertical transistor with a first side and an opposite second side, the vertical transistor comprising:
- a first load electrode and a control electrode disposed on the first side and a second load electrode disposed on the opposite second side;
- a first load terminal, a second load terminal, and a control terminal each disposed along an external contact plane of the semiconductor device, wherein the first side of the vertical transistor faces the external contact plane;
- a dielectric layer surrounding the vertical transistor and having formed therein a cutout to expose a contact area of the second load terminal that faces away from the external contact plane;
- and
- an electrically conductive deposited layer plated onto both the second load electrode of the vertical transistor and the contact area of the second load terminal of the device to form an electrically continuous solder-free connection between the second load electrode and the second load terminal through the cutout in the dielectric layer.
A semiconductor device, comprising:
- a vertical transistor with a first side and an opposite second side, the vertical transistor comprising at least one first load electrode and a control electrode disposed on the first side and a second load electrode disposed on the opposite second side;
- at least one first load terminal, at least one second load terminal, and a control terminal each disposed along an external contact plane of the semiconductor device, wherein the first side of the vertical transistor faces the external contact plane;
- a dielectric layer extending from at least one edge of the vertical transistor the at least one second load terminal;
- and
- an electrically conductive deposited layer plated onto the second load electrode of the vertical transistor, onto the dielectric layer, and onto the at least one second load terminal of the device form an electrically continuous solder-free connection between the second load electrode of the vertical transistor and the at least one second load terminal.
A semiconductor device, comprising:
- a vertical transistor with a first side and an opposite second side, the vertical transistor comprising:
- at least two first load electrodes and a control electrode disposed on the first side so that control electrode is disposed between the two first load electrodes, and a second load electrode disposed on the opposite second side;
- at least two first load terminals, at least two second load terminals, and a control terminal each disposed along an external contact plane of the semiconductor device, wherein the first side of the vertical transistor faces the external contact plane;
- a dielectric layer surrounding the vertical transistor and having formed therein cutouts over the at least two second load terminals, the cutouts being formed in the dielectric layer to be perpendicular to the external contact plane;
- and
- an electrically conductive deposited layer plated on the second load electrode of the vertical transistor, on the dielectric layer and on the at least two second load terminals of the device to form an electrically continuous solder-free connection therebetween.
Dependencies are inferred from the claim text.