Silicon device structure, and sputtering target used for forming the same
AssigneeHitachi Cable, Ltd.
InventorsNoriyuki Tatsumi, Tatsuya Tonogi
Life of this patent
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Abstract
There is provided a silicon device structure, comprising: a P-doped n+ type amorphous silicon film formed on a silicon semiconductor, and a wiring formed on the P doped n+ type amorphous silicon film, wherein the wiring is formed of a silicon oxide film which is formed on a surface of the P doped n+ type amorphous silicon film and is also formed of a copper alloy film, and the copper alloy film is a film obtained by forming a copper alloy containing Mn of 1 atom % or more and 5 atom % or less and P of 0.05 atom % or more and 1.0 atom % or less by sputtering.
Claims13
A silicon device structure, comprising:
- a P doped n+ type amorphous silicon film formed on a silicon semiconductor film, and
- a wiring formed on the P doped n+ type amorphous silicon film,
- wherein the wiring is formed of a silicon oxide film which is formed on a surface of the P doped n+ type amorphous silicon film and is also formed of a copper alloy film, and the copper alloy film has a composition containing Mn of 0.9 atom % or more and 5 atom % or less and P of 0.025 atom % or more and 0.3 atom % or less,
- wherein a copper alloy, being the sputtering target material, is formed by being melted and alloyed by a casting method, containing Mn of 1 atom % or more and 5 atom % or less and P of 0.05 atom % or more and 1.0 atom % or less.
A silicon device structure, comprising:
- a P-doped n+ type amorphous silicon film formed on a silicon semiconductor film, and
- a wiring formed on the P doped n+ type amorphous silicon film,
- wherein the wiring is formed of a silicon oxide film which is formed on a surface of the P doped n+ type amorphous silicon film and is also formed of a copper alloy film, and the copper alloy film is a film obtained by forming a copper alloy containing Mn of 1 atom % or more and 5 atom % or less and P of 0.05 atom % or more and 1.0 atom % or less by sputtering, wherein a copper alloy, being the sputtering target material, is formed by being melted and alloyed by a casting method, containing Mn of 1 atom % or more and 5 atom % or less and P of 0.05 atom % or more and 1.0 atom % or less.
Dependencies are inferred from the claim text.