Device having conductive substrate via with catch-pad etch-stop
AssigneeFreescale Semiconductor, Inc.
InventorsDarrell G. Hill, Bruce M. Green
Life of this patent
Estimating the term…
Loading patent…
AssigneeFreescale Semiconductor, Inc.
InventorsDarrell G. Hill, Bruce M. Green
Estimating the term…
An electronic device (50) having a conductive substrate via (70) extending between a conductor (39) on a rear face (22) and a conductor (58) over the front surface (23) of the substrate (21) includes a multi-layered etch-stop (56, 56-2) beneath the front surface conductor (58). The etch-stop (56, 56-2) permits use of a single etchant to penetrate both the substrate (21) and any overlying semiconductor (44) and/or dielectric (34) without attacking the overlying front surface conductor (58). This is especially important when the semiconductor (44) and dielectric (34) are so thin as to preclude changing etchants when these regions are reached during etching. The etch-stop (56) is preferably a stack (63, 73) of N≧2 pairs (62-i) of sub-layers (62-i1, 62-i2) in either order, where a first sub-layer (62-i1) comprises stress relieving and/or adhesion promoting material (e.g., Ti), and the second sub-layer (62-i2) comprises etch resistant material (e.g., Ni). In a further embodiment, where the device (50) includes field effect transistors (52) having feedback sensitive control gates (30), the etch-stop material (56) is advantageously used to form gate shields (76).
An electronic device having a substrate with a conductive through-substrate via extending between a first surface and a second surface of the substrate, comprising:
An electronic device, comprising:
An electronic device, comprising:
Dependencies are inferred from the claim text.