Method of manufacturing a semiconductor component and structure

A method for manufacturing a semiconductor component, comprising:

• providing a semiconductor material;
• forming a first layer of dielectric material over the semiconductor material;
• forming a first plurality of subportions of an inductor from the first layer of dielectric material using a first damascene process;
• forming a second layer of dielectric material over the first plurality of subportions of the inductor;
• forming a third layer of dielectric material over the semiconductor material, the third layer of dielectric material between the first layer of dielectric material and the semiconductor material;
• forming a first layer of electrically conductive material over the third layer of dielectric material;
• forming a fourth layer of dielectric material over the first layer of electrically conductive material;
• forming a second layer of electrically conductive material over the fourth layer of dielectric material;
• forming a second plurality of subportions of the inductor from the second layer of dielectric material using a second damascene process, wherein a first subportion of the first plurality of subportions cooperates with a first subportion of the second plurality of subportions to form a first segment of the inductor wherein forming the first plurality of subportions of the inductor includes forming a first conductor in electrical communication with the second layer of electrically conductive material.

A semiconductor component, comprising:

• a semiconductor material;
• a first layer of dielectric material formed over the semiconductor material;
• a first damascene structure formed from the first layer of dielectric material, the first damascene structure including first and second inductor portions and a first subportion of a conductor element;
• a second layer of dielectric material formed over the first damascene structure;
• a second damascene structure formed from the second layer of dielectric material, the second damascene structure including third and fourth inductor portions and a second subportion of the conductor element, wherein the first and third inductor portions cooperate to form a first segment of an inductor, the second and fourth inductor portions cooperate to form a second segment of the inductor, and the first and second subportions of the conductor element cooperate to form the conductor, wherein the first segment has first and second ends and wherein the inductor further includes a third segment having first and second ends, wherein the first end of the second segment extends from the second end of the first segment, and wherein an angle between the first and second segments is less than or greater than 90 degrees.

A semiconductor component, comprising:

• a semiconductor material;
• a first layer of dielectric material formed over the semiconductor material;
• a first damascene structure formed from the first layer of dielectric material, the first damascene structure including first and second inductor portions and a first subportion of a conductor element;
• a second layer of dielectric material formed over the first damascene structure;
• a second damascene structure formed from the second layer of dielectric material, the second damascene structure including third and fourth inductor portions and a second subportion of the conductor element, wherein the first and third inductor portions cooperate to form a first segment of an inductor, the second and fourth inductor portions cooperate to form a second segment of the inductor, and the first and second subportions of the conductor element cooperate to form the conductor, and further including a capacitor formed between the semiconductor material and the first layer of dielectric material, wherein the capacitor comprises first and second plates and a third layer of dielectric material between the first and second plates, and wherein at least the first plate of the capacitor has sides that intersect and make an angle of less than or greater than 90 degrees.

A semiconductor component, comprising:

• a semiconductor material;
• a first layer of dielectric material formed over the semiconductor material;
• a first damascene structure formed from the first layer of dielectric material, the first damascene structure including first and second inductor portions and a first subportion of a conductor element;
• a second layer of dielectric material formed over the first damascene structure;
• a second damascene structure formed from the second layer of dielectric material, the second damascene structure including third and fourth inductor portions and a second subportion of the conductor element, wherein the first and third inductor portions cooperate to form a first segment of an inductor, the second and fourth inductor portions cooperate to form a second segment of the inductor, and the first and second subportions of the conductor element cooperate to form the conductor, further including dielectric filled slots in the conductor element.