High voltage semiconductor devices and methods of forming the same
AssigneeInfineon Technologies Austria AG
InventorsMartin Kerber, Uwe Wahl
Life of this patent
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Abstract
High voltage semiconductor devices and methods of fabrication thereof are described. In one embodiment, a method of forming a semiconductor device includes forming first trenches in an insulating material. A trap region is formed in the insulating material by introducing an impurity into the first trenches. The first trenches are filled with a conductive material.
Claims34
A method of fabricating a semiconductor device, the method comprising:
- forming first trenches in an insulating material, wherein forming first trenches comprises:
- forming a second dielectric over a first dielectric, the first dielectric comprising a plurality of dielectric layers or a single dielectric layer, and
- forming the first trenches in the second dielectric;
- forming a trap region in the insulating material by introducing an impurity into the first trenches;
- and
- filling the first trenches with a conductive material.
A method of fabricating a semiconductor device, the method comprising:
- forming first trenches in an insulating material;
- forming a trap region in the insulating material by introducing an impurity into the first trenches;
- filling the first trenches with a conductive material;
- forming second trenches in the insulating material, the second trenches being formed under the first trenches and being separated by a portion of the insulating material;
- and
- filling the second trenches with the conductive material.
A method of fabricating a semiconductor device, the method comprising:
- forming first trenches in an insulating material;
- forming a trap region in the insulating material by introducing an impurity into the first trenches, wherein introducing an impurity into the first trenches comprises implanting the impurity into the first trenches;
- and
- filling the first trenches with a conductive material.
A method of fabricating a semiconductor device, the method comprising:
- forming a first coil over a substrate;
- forming an insulating material above the first coil;
- forming trenches in the insulating material;
- forming trap regions in the insulating material by implanting an impurity into the trenches;
- and
- forming a second coil in the insulating material by filling the trenches with a conductive material.
A transformer comprising:
- a first coil overlying a semiconductor substrate;
- an insulation material disposed over the first coil;
- a second coil disposed in the insulation material;
- and
- a trap region comprising an impurity disposed under the second coil in the insulation material.
A method of fabricating a semiconductor device, the method comprising:
- forming first trenches in an insulating material;
- forming a trap region in the insulating material by introducing an impurity into the first trenches;
- and
- filling the first trenches with a conductive material, wherein the impurity comprises a material selected from the group consisting of silicon, germanium, carbon, boron, indium, gallium, phosphorus, arsenic, antimony, inert gas, and metal.
Dependencies are inferred from the claim text.