SOI (silicon on insulator) structure semiconductor device and method of manufacturing the same
AssigneesDenso Corporation, Shin-Etsu Handotai Co., Ltd.
InventorsHiroshi Ohtsuki, Mitsutaka Katada, Nobuhiko Noto, Hiroshi Takeno, Kazuhiko Yoshida
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Abstract
In a SOI structure semiconductor device using a SOI substrate, a lattice distortion layer is formed by implanting Ar ions into a silicon substrate as an active layer. The lattice distortion layer is capable of serving as a gettering site. The dose amount of Ar ions is adjusted in such a manner that tensile stress in the lattice distortion layer is equal to or greater than 11 MPa and equal to or less than 27 MPa. Thus, the lattice distortion layer can prevent occurrence of a leakage current while serving as the gettering site.
Claims13
A SOI structure semiconductor device comprising:
- a SOI substrate including a silicon substrate of monocrystalline silicon, a first conductivity type active layer of monocrystalline silicon, and a buried insulation layer between the silicon substrate and the active layer;
- and
- a second conductivity type layer located in a surface portion of the active layer to form a PN junction with the active layer, wherein
- a silicon crystalline lattice of the active layer is distorted to form a lattice distortion layer serving as a gettering site.
Dependencies are inferred from the claim text.