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US 8,410,572 B2Granted
Bipolar transistor with emitter and/or collector contact structure forming a Schottky contact and method of production
AssigneeEpcos AG
InventorLéon C. M. van den Oever
Life of this patent
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Abstract
A base contact connection, an emitter structure and a collector structure are arranged on an n-layer, which can be provided for additional npn transistors. The collector structure is arranged laterally to the emitter structure and at least one of the emitter and collector comprises a Schottky contact on a surface area of the n-layer.
Claims16
A bipolar transistor, comprising:
- an n-layer having a surface,
- a base contact connection electrically conductively connected to the n-layer,
- an emitter structure,
- an emitter contact connection, which is a metal, electrically conductively connected to the emitter structure,
- a collector structure arranged laterally to the emitter structure with respect to the surface of the n-layer, and
- a collector contact connection, which is a metal, electrically conductively connected to the collector structure,
- wherein at least one of the emitter contact connection and/or the collector contact connection forms a Schottky contact on the surface of the n-layer.
4 more elements
A method of forming a bipolar transistor with an n-type base, the method comprising:
- forming an n-layer of semiconductor material,
- forming an emitter structure on the n-layer by either a) forming a p+-layer on the n-layer, and forming a metal emitter contact layer on the p+-layer or b) forming a metal emitter contact connection on the n-layer, and forming an emitter Schottky contact on the n-layer, and
- forming a collector structure on the n-layer by either a) forming a p+-layer on the n-layer, and forming a metal collector contact layer on the p+-layer or b) forming a metal collector contact connection on the n-layer, and forming a collector Schottky contact on the n-layer,
- wherein at least one of the emitter contact connection and/or the collector contact connection form a Schottky contact on an area of the surface of the n-layer.
1 more element
A method of forming a bipolar transistor, the method comprising:
- forming an n+-region,
- forming an n-layer on the n30 -region,
- forming a p+-layer on the n-layer,
- forming an emitter contact layer on the p+-layer,
- forming a base contact layer on the n+-region,
- forming a metal emitter contact connection on the emitter contact layer,
- applying a metal base contact connection on the base contact layer, and
- applying a metal collector contact connection on the n-layer, the collector contact connection forming a collector Schottky contact on the n-layer.
5 more elements
Dependencies are inferred from the claim text.