Layout of dummy patterns
AssigneeUnited Microelectronics Corp.
InventorHsin-Ming Hou
Life of this patent
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Abstract
A layout of dummy patterns on a wafer having a plurality of pads disposed thereon is described. The layout of the dummy patterns includes having a plurality of dummy patterns spaced apart from each other and enclosing the plurality of the pads. The plurality of dummy patterns also include a plurality of peripheral dummy patterns and a plurality of central dummy patterns, wherein a minimum distance between the plurality of the central dummy patterns and the plurality of the pads is greater a minimum distance between the plurality of the peripheral dumpy patterns and the plurality of the pads.
Claims20
A layout of a plurality of dummy patterns disposed over a wafer that comprises at least a plurality of pads thereon, the plurality of the dummy patterns being spaced apart from each other, and surrounding the plurality of the pads, wherein the dummy patterns are of the same material as the pads and the dummy patterns are formed with a smaller size than the pads and a seal ring is configured at peripheral edges of the wafer, and some of the plurality of the dummy patterns is disposed between the seal ring and the plurality of the pads and a pattern density which is the percentage of area occupied by the plurality of pads and the plurality of dummy patterns with respect to the overall area of a pad material layer formed over the wafer constituted with aluminum or aluminum bearing metals is about 30%.
A layout of a plurality of dummy patterns disposed over a wafer that comprises at least a plurality of pads thereon, the plurality of the dummy patterns being spaced apart from each other and surrounding the plurality of the pads, wherein a minimum distance S6 is maintained between the dummy patterns and a peripheral edge of the wafer, a plurality of peripheral dummy patterns is disposed at a minimum distance S4 from a plurality of central dummy patterns, a minimum distance S5 is maintained between a plurality of the central dummy patterns and a plurality of the pads, a minimum distance L2 is maintained between any two immediate neighboring central dummy patterns, a minimum distance S2 is maintained between any two immediate neighboring peripheral dummy patterns and a minimum distance S3 is maintained between a plurality of the peripheral dummy patterns and a plurality of the pads.
Dependencies are inferred from the claim text.