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US 8,410,547 B2Granted
Semiconductor device and method for fabricating the same
AssigneeHynix Semiconductor Inc.
InventorsHeung-Jae Cho, Hong-Seon Yang, Se-Aug Jang
Life of this patent
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Abstract
A semiconductor device includes a substrate having a recess in an area where a gate is to be formed, spacers formed over sidewalls of the recess, and a first gate electrode filling in the recess. The spacers include material having the first work function or insulation material. The first gate electrode includes material having a second work function, wherein the second work function is higher than that of the spacers.
Claims18
A semiconductor device comprising:
- a substrate having a recess in an area where a gate is to be formed;
- spacers formed over sidewalls of the recess, wherein the spacers include material having a first work function;
- a first gate electrode filling in the recess between the spacers, wherein the first gate electrode includes material having a second work function, wherein the second work function is higher than the first work function;
- and
- a gate insulation layer interposed between the substrate and the spacer, between the substrate and the first gate electrode, and between the spacer and the first gate electrode.
2 more elements
A semiconductor device comprising:
- a substrate having an active area defined by an isolation layer;
- a first groove formed in a channel area of the active area;
- a second groove formed in a part of the isolation layer, the second groove having a depth deeper than that of the first groove;
- spacers formed over sidewalls of the first groove, the spacers comprising material having a first work function or an insulation material;
- a first gate electrode overlapping with the first groove and the second groove and passing through the active area, wherein the first gate electrode includes material having a second work function, wherein the second work function is higher than the first work function;
- and
- source/drain regions formed in the active area at both sides of the first gate electrode.
4 more elements
Dependencies are inferred from the claim text.