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US 8,410,546 B2Granted
Semiconductor device and DC-DC converter
AssigneeKabushiki Kaisha Toshiba
InventorsYusuke Kawaguchi, Miwako Akiyama, Yoshihiro Yamaguchi, Nobuyuki Sato, Shigeaki Hayase
Life of this patent
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Abstract
A semiconductor device includes: a semiconductor substrate of a first conductivity type; a semiconductor region provided in the semiconductor substrate; a first trench formed in the semiconductor region; a second trench formed in the semiconductor substrate; a trench gate electrode provided in the first trench; and a trench source electrode provided in the second trench. The trench source electrode is shaped like a stripe and connected to the source electrode through its longitudinal portion.
Claims5
A semiconductor device comprising:
- a semiconductor substrate of a first conductivity type;
- a semiconductor layer of a second conductivity type provided in part of an upper portion of the semiconductor substrate;
- a semiconductor region of the first conductivity type provided in part of an upper portion of the semiconductor layer;
- a first trench formed from an upper surface side of the semiconductor region, penetrating through the semiconductor region and the semiconductor layer, and reaching the semiconductor substrate;
- a second trench formed in the semiconductor substrate and outside the semiconductor layer from an upper surface side of the semiconductor substrate;
- a gate dielectric film formed on an inner surface of the first trench;
- a trench gate electrode provided on the gate dielectric film;
- a capacitive dielectric film formed on an inner surface of the second trench;
- a trench source electrode provided on the capacitive dielectric film;
- a dielectric film that overlaps an upper surface of a portion of the semiconductor substrate in which the second trench is formed;
- a drain electrode provided on a lower surface of the semiconductor substrate;
- and
- a source electrode provided on an upper surface of the semiconductor layer,
- the trench source electrode extending in a direction parallel to the upper surface of the semiconductor substrate and being connected to the source electrode through a portion of the trench source electrode extending in the parallel direction, wherein end portions of the trench source electrode in the parallel direction are connected to the source electrode.
11 more elements
A semiconductor device comprising:
- a semiconductor substrate of a first conductivity type;
- a semiconductor layer of a second conductivity type provided in part of an upper portion of the semiconductor substrate;
- a semiconductor region of the first conductivity type provided in part of an upper portion of the semiconductor layer;
- a first trench formed from an upper surface side of the semiconductor region, penetrating through the semiconductor region and the semiconductor layer, and reaching the semiconductor substrate;
- a second trench formed in the semiconductor substrate and outside the semiconductor layer from an upper surface side of the semiconductor substrate;
- a gate dielectric film formed on an inner surface of the first trench;
- a trench gate electrode provided on the gate dielectric film;
- a capacitive dielectric film formed on an inner surface of the second trench;
- a trench source electrode provided on the capacitive dielectric film;
- a dielectric film that overlaps an upper surface of a portion of the semiconductor substrate in which the second trench is formed;
- a drain electrode provided on a lower surface of the semiconductor substrate;
- and
- a source electrode provided on an upper surface of the semiconductor layer,
- the trench source electrode extending in a direction parallel to the upper surface of the semiconductor substrate and being connected to the source electrode through a portion of the trench source electrode extending in the parallel direction, wherein end portions in the parallel direction and one or more intermediate portions of the trench source electrode are connected to the source electrode.
11 more elements
A semiconductor device comprising:
- a semiconductor substrate of a first conductivity type;
- a semiconductor layer of a second conductivity type provided in part of an upper portion of the semiconductor substrate;
- a semiconductor region of the first conductivity type provided in part of an upper portion of the semiconductor layer;
- a first trench formed from an upper surface side of the semiconductor region, penetrating through the semiconductor region and the semiconductor layer, and reaching the semiconductor substrate;
- a second trench formed in the semiconductor substrate and outside the semiconductor layer from an upper surface side of the semiconductor substrate;
- a gate dielectric film formed on an inner surface of the first trench;
- a trench gate electrode provided on the gate dielectric film;
- a capacitive dielectric film formed on an inner surface of the second trench;
- a trench source electrode provided on the capacitive dielectric film;
- a dielectric film that overlaps an upper surface of a portion of the semiconductor substrate in which the second trench is formed;
- a drain electrode provided on a lower surface of the semiconductor substrate;
- and
- a source electrode provided on an upper surface of the semiconductor layer,
- the trench source electrode extending in a direction parallel to the upper surface of the semiconductor substrate and being connected to the source electrode through a portion of the trench source electrode extending in the parallel direction, wherein the upper surface of the portion of the semiconductor substrate that is between the second trench and a third trench, that is formed in the semiconductor substrate and outside the semiconductor layer, is not in contact with the source electrode.
11 more elements
Dependencies are inferred from the claim text.