US 8,410,542 B2 · Charge-trapping nonvolatile memory devices having gate structures therein with improved blocking layers

Abstract

Nonvolatile memory devices include a tunnel insulating layer on a substrate and a charge storing layer on the tunnel insulating layer. A charge transfer blocking layer is provided on the charge storing layer. The charge transfer blocking layer is formed as a composite of multiple layers, which include a first oxide layer having a thickness of about 1 Å to about 10 Å. This first oxide layer is formed directly on the charge storing layer. The charge transfer blocking layer includes a first dielectric layer on the first oxide layer. The charge transfer blocking layer also includes a second oxide layer on the first dielectric layer and a second dielectric layer on the second oxide layer. The first and second dielectric layers have a higher dielectric constant relative to the first and second oxide layers, respectively. The memory cell includes an electrically conductive electrode on the charge transfer blocking layer.

Claims20

Dependent claims

A gate structure, comprising:

a tunnel insulation layer pattern on a substrate;
a charge trapping layer pattern on the tunnel insulation layer pattern;
a blocking layer pattern on the charge trapping layer pattern, the blocking layer including:
a first silicon oxide layer pattern having a thickness in a range from about 1 Å to about 10 Å, on the charge trapping layer pattern;
a first high-k dielectric layer pattern on the first silicon oxide layer pattern;
a second silicon oxide layer pattern on the first high-k dielectric layer pattern;
and
a second high-k dielectric layer pattern on the second silicon oxide layer pattern;
and
a gate electrode on the blocking layer pattern.

7 more elements

Dependencies are inferred from the claim text.

Charge-trapping nonvolatile memory devices having gate structures therein with improved blocking layers

Life of this patent

Charge-trapping nonvolatile memory devices having gate structures therein with improved blocking layers

Life of this patent

Abstract

Claims20