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US 8,410,539 B2Granted
MOS transistor with a settable threshold
AssigneeSTMicroelectronics (Crolles 2) SAS
InventorsPascale Mazoyer, Germain Bossu
Life of this patent
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Abstract
A MOS transistor comprising a conductive extension of its source region, insulated from its substrate, and partially extending under its channel.
Claims10
A MOS transistor comprising a source region, a drain region, a gate, a silicon region located between the source and drain regions and configured for formation of a channel between the source and drain regions, and a conductive extension of the source region, insulated from the silicon region and partially extending under the channel.
A MOS transistor comprising:
- a source region of a first conductivity type;
- a drain region of the first conductivity type;
- a silicon region of a second conductivity type between the source region and the drain region, the silicon region configured for formation therein, in response to a gate voltage, of a channel between the source region and the drain region;
- a conductive gate above the channel and insulated from the channel;
- a conductive finger extending from the source region into the silicon region under at least a part of the channel;
- and
- an insulating layer separating the conductive finger from the silicon region.
4 more elements
Dependencies are inferred from the claim text.