Thin film transistor having Schottky barrier
AssigneeChunghwa Picture Tubes, Ltd.
InventorsMing-Tse Chang, Chun-Wei Su
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Abstract
A thin film transistor having Schottky barrier includes a substrate, a first gate conductive layer formed on the substrate, a first semiconductor layer having a first conductive type formed on the first gate conductive layer, a source conductive layer and a drain conductive layer electrically isolated from each other and positioned on the first semiconductor layer, a second semiconductor layer having a second conductive type formed on the source conductive layer and the drain conductive layer, and a second gate conductive layer formed on the second semiconductor layer. The first conductive type is complementary to the second conductive type.
Claims20
A thin film transistor (TFT) having Schottky barrier, comprising:
- a substrate;
- a first gate conductive layer formed on the substrate;
- a first semiconductor layer having a first conductivity type formed on the first gate conductive layer;
- a source conductive layer and a drain conductive layer electrically isolated from each other and positioned on the first semiconductor layer;
- a second semiconductor layer having a second conductivity type formed on the source conductive layer and the drain conductive layer, the second conductivity type being complementary to the first conductivity type;
- and
- a second gate conductive layer formed on the second semiconductor layer.
Dependencies are inferred from the claim text.