Magnetic random access memory and method of fabricating the same
AssigneeKabushiki Kaisha Toshiba
InventorsDaisuke Ikeno, Koji Yamakawa, Katsuaki Natori, Yasuyuki Sonoda
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Abstract
According to one embodiment, a semiconductor device, includes a magneto resistive element including a first magnetic layer, a first interface magnetic layer, a nonmagnetic layer, a second interface magnetic layer and a second magnetic layer as a stacked structure in order; and a metal layer including first metal atoms, second metal atoms and boron atoms, the metal layer being provided at least one region selected from under the first magnetic, between the first magnetic layer and the first interface magnetic layer, between the second interface magnetic layer and the second magnetic layer, and upper the second magnetic layer.
Claims19
A magnetic random access memory, comprising:
- a magneto resistive element including a first magnetic layer, a first interface magnetic layer, a nonmagnetic layer, a second interface magnetic layer and a second magnetic layer as a stacked structure in order;
- and
- a metal layer including first metal atoms, second metal atoms and boron atoms, the metal layer being provided at least one region selected from under the first magnetic layer, between the first magnetic layer and the first interface magnetic layer, between the second interface magnetic layer and the second magnetic layer, and upper the second magnetic layer.
A method of fabricating a magnetic random access, comprising:
- providing a first magnetic layer above a substrate;
- providing a first metal layer having at least one of first metal atoms and second metal atoms;
- providing a first interface magnetic layer containing boron atoms on the first metal layer;
- providing an nonmagnetic layer on the first interface magnetic layer;
- providing a second interface magnetic layer containing boron atoms on the nonmagnetic layer;
- providing a second metal layer containing at least the other of the first metal atoms and the second metal atoms;
- providing a second magnetic layer on the second metal layer;
- and
- performing a heat treatment with respect to the substrate.
A method of fabricating a magnetic random access, comprising:
- providing a first magnetic layer above a substrate;
- providing a first interface magnetic layer having boron atoms above the first magnetic layer;
- providing an nonmagnetic layer on the first interface magnetic layer;
- providing a second interface magnetic layer having boron atoms on the nonmagnetic layer;
- providing a first metal layer having at least first metal atoms on the second interface magnetic layer;
- performing a heat treatment with respect to the substrate;
- removing the first metal layer;
- and
- providing a second magnetic layer above the second interface magnetic layer.
Dependencies are inferred from the claim text.