CMOS image sensor
AssigneeIntellectual Ventures II LLC
InventorWoo Sig Min
Life of this patent
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Abstract
Disclosed is a CMOS image sensor, which can minimize a reflectance of light at an interface between a photodiode and an insulating film, thereby enhancing image sensitivity. Such a CMOS image sensor includes a substrate provided with a photodiode consisting of Si, an insulating film consisting of SiO2 and formed on the substrate, a semi-reflection film interposed between the substrate and the insulating film, and metal interconnections, color filters and micro lenses constituting individual unit pixels. The semi-reflection film has a refraction index value between those of the Si photodiode and the SiO2 insulating film.
Claims8
A method of forming an image sensor, the method comprising:
- forming an Si photodiode in a substrate;
- forming, on the Si photodiode, an anti-reflection film having a gradient refractive index that varies between a refractive index of the Si photodiode and a refractive index of an SiO2 insulating film;
- and
- forming the SiO2 insulating film on the anti-reflection film.
Dependencies are inferred from the claim text.