US 8,410,524 B2 · Group III nitride semiconductor device and epitaxial substrate

Abstract

Affords Group III nitride semiconductor devices in which the leakage current from the Schottky electrode can be reduced. In a high electron mobility transistor 11, a supporting substrate 13 is composed of AlN, AlGaN, or GaN, specifically. An AlYGa1−YN epitaxial layer 15 has a full-width-at-half maximum of (0002) plane XRD of 150 sec or less. A GaN epitaxial layer 17 is provided between the gallium nitride supporting substrate and the AlYGa1−YN epitaxial layer (0<Y≦1). A Schottky electrode 19 is provided on the AlYGa1−YN epitaxial layer 15. The Schottky electrode 19 constitutes a gate electrode of the high electron mobility transistor 11. The source electrode 21 is provided on the gallium nitride epitaxial layer 15. The drain electrode 23 is provided on the gallium nitride epitaxial layer 15.

Claims2

Dependent claims

A Group III nitride semiconductor device characterized in being furnished with:

a supporting substrate composed of GaN, said supporting substrate having a screw dislocation density of not greater than 1×108cm−2 and a carrier concentration of not greater than 1×1019cm−3;
an undoped gallium nitride homoepitaxial layer provided on said substrate, said gallium nitride homoepitaxial layer having a thickness of from 0.5 μm to 1000 μm and a carrier concentration of not greater than 1×1017cm−3;
and
an AlyGa1−yN (0.1≦y≦0.7) epitaxial layer having a thickness of from 5 nm to 50 nm and a carrier concentration of not greater than 1×1019cm−3, provided on said gallium nitride homoepitaxial layer;
whereby
said AlyGa1−yN (0.1≦y≦0.7) epitaxial layer has a full-width at half-maximum for (0002) plane XRD of 150 arcsec or less;
a Schottky electrode provided on said AlyGa1−yN (0.1≦y≦0.7) epitaxial layer;
a source electrode provided on said AlyGa1−yN (0.1≦y≦0.7) epitaxial layer;
and
a drain electrode provided on said AlyGa1−yN (0.1≦y≦0.7) epitaxial layer.

7 more elements

Dependencies are inferred from the claim text.

Group III nitride semiconductor device and epitaxial substrate

Life of this patent

Group III nitride semiconductor device and epitaxial substrate

Life of this patent

Abstract

Claims2